SSM9575GM

SSM9575M/GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching characteristics D D D D BV DSS R DS(ON) ID G -60V 90mΩ -4A SO-8 S S S Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9575M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. D G S This device is available with Pb-free lead finish (second-level interconnect) as SSM9575GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -60 ± 25 -4 -3.2 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit °C/W 12/02/2004 Rev.2.01 www.SiliconStandard.com 1 of 5 SSM9575M/GM Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -60 -1 - Typ. -0.04 7 18 5 7 12 5 68 32 165 125 Max. Units 90 120 -3 -1 -25 ±100 28 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=±25V ID=-4A VDS=-48V VGS=-4.5V VDS=-30V ID=-1A RG=3.3Ω , VGS=-10V RD=30Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1745 2790 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-2A, VGS=0V IS=-4A, VGS=0V, dI/dt=100A/µs Min. - Typ. 56 146 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width