SSM9585GM

SSM9585GM P-channel Enhancement-mode Power MOSFET Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS compliant. D BVDSS R DS(ON) ID -80V 180mΩ -2.7A G S DESCRIPTION D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9585GM is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters. D D D G SO-8 S S S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -80 ±25 -2.7 -2.1 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol RΘj-a Parameter Maximum Thermal Resistance Junction-ambient 3 Value 50 Unit °C/W 3/21/2005 Rev.2.01 www.SiliconStandard.com 1 of 5 SSM9585GM ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -80 -1 - Typ. -0.07 5 18 5 7 10 6 67 30 140 98 Max. Units 180 200 -3 -1 -25 ±100 28 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance VGS=-10V, ID=-2.7A VGS=-4.5V, ID=-2.5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) VDS=VGS, ID=-250uA VDS=-10V, ID=-2.7A VDS=-80V, VGS=0V VDS=-64V, VGS=0V VGS=±25V ID=-2.7A VDS=-64V VGS=-4.5V VDS=-40V ID=-1A RG=3.3Ω , VGS=-10V RD=40Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1790 2860 SOURCE-DRAIN DIODE Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-2A, VGS=0V IS=-2.7A, VGS=0V, dI/dt=100A/µs Min. - Typ. 80 320 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width