SSM95T06GS

SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 60V 8.5mΩ 75A S Description The SSM95T06S is in a TO-263 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM95T06P in TO-220, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. G GD S TO-263 (S) Pb-free lead finish (second-level interconnect) D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 60 ±20 75 66 260 138 1.11 4 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units °C/W °C/W 2/16/2005 Rev.1.10 www.SiliconStandard.com 1 of 5 SSM95T06GP,S Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 60 1 Min. Typ. 0.05 72 72 16 53 20 76 67 109 900 560 1.1 Typ. 40 60 Max. Units 8.5 12 3 10 100 ±100 115 1.7 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=45A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=45A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS= ±20V ID=45A VDS=48V VGS=4.5V VDS=30V ID=45A RG=3.3Ω , VGS=10V RD=0.67Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage 2 2 2 5700 9200 Source-Drain Diode Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width