SSM9620M

SSM9620M P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V drive Fast switching Simple drive requirement D D D D BVDSS R DS(ON) G -20V 20mΩ -9.5A ID SO-8 S S S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D G S The SSM9620M is supplied in the SO-8 package, which is widely preferred for commercial and industrial surface-mount applications. This device is well suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 20 ±12 -9.5 -7.6 -76 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit °C/W Rev.2.02 3/06/2004 www.SiliconStandard.com 1 of 6 SSM9620M Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ T j Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -20 -0.037 20 35 -1 -1 -25 ±100 - V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-9.5A VGS=-2.5V, ID=-6.0A 28 30 6 3.5 26 500 70 300 2158 845 230 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-9.5A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 12V ID=-9.5A VDS=-10V VGS=-5V VDS=-10V ID=-9.5A RG=6Ω ,VGS=-4.5V RD=1.05Ω VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V 1 Min. Typ. Max. Units -2.5 -76 -1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=-2.5A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width