SSM9926EM

SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package D2 D1 D1 D2 BV DSS RDS(ON) G2 S2 20V 30mΩ 6A ID SO-8 G1 S1 Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 20 ±12 6 4.8 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 62.5 . Unit °C/W Rev.2.02 1/29/2004 www.SiliconStandard.com 1 of 6 SSM9926EM Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 15.6 12.5 1 6.5 5 9 26.2 6.8 355 190 85 Max. Units 30 45 1 25 ±10 V V/°C mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS= ±10V ID=6A VDS=20V VGS=5V VDS=10V ID=1A RG=3.3Ω ,VGS=5V RD=10Ω VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V,VS=1.2V 1 Min. - Typ. - Max. Units 1.7 20 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C,IS=1.7A,VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width