SSM9928O

SSM9928O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Optimal DC/DC battery application S1 S2 D1 G1 G2 D2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 20V 23mΩ 5A G2 S2 Pb-free; RoHS-compliant D2 S2 TSSOP-8 S1 D1 G1 S1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 4.5V Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 ±12 5 3.5 25 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA T Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 125 Unit ℃/W 03/11/2007 Rev.1.00 www.SiliconStandard.com 1 SSM9928O ELECTRICAL CHARACTERISTICS Symbol BVDSS ΔBVDSS/ΔTj @Tj=25 C(unless otherwise specified) o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.02 21 15.9 1.5 7.4 6.2 9 30 11 530 245 125 Max. Units 23 29 1 25 ±10 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS=±12V ID=5A VDS=10V VGS=4.5V VDS=10V ID=1A RG=3.3Ω,VGS=4.5V RD=10Ω VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V,VS=1.2V Tj=25℃,IS=5A,VGS=0V Min. - Typ. - Max. Units 0.83 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width