SSM9930M

SSM9930M DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Full-bridge applications, such as LCD monitor inverter SO-8 P1S/P2S P1G N2G N1S/N2S N1D/P1D N1G P2G N2D/P2D N-CH BV DSS R DS(ON) ID 30V 33mΩ 6.3A -30V 55mΩ -5.1A P-CH BV DSS RDS(ON) ID P1S P1G P2S Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9930M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for applications such as low-voltage inverters and motor drives. N1G P2G P1N1D P2N2D N2G N1S N2S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ± 25 6.3 4.2 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±25 -5.1 -3.4 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 10/21/2004 Rev.1.01 www.SiliconStandard.com 1 of 8 SSM9930M N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. Max. Units 0.037 33 60 3 1 25 ±100 - V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/ ∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=3A 5.2 7.1 2.3 3.8 7.2 10.4 18 7.8 600 230 94 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±25V ID=5A VDS=15V VGS=4.5V VDS=15V ID=1A RG=6Ω ,VGS =10V RD=15Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V IS=1.7A, VGS=0V dI/dt=100A/µs Min. - Typ. Max. Units 21.4 16 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge 10/21/2004 Rev.1.01 www.SiliconStandard.com 2 of 8 SSM9930M P-channel Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. -30 -1 - Typ. -0.037 Max. Units 55 100 -3 -1 -25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BVDSS/∆ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Breakdown Voltage Temperature Coefficient Reference to 25°C,ID=-1mA VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V V =-24V, VGS=0V DS VGS= ± 25V ID=-5A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=6Ω ,VGS =-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz 4.8 7.3 2.5 3.8 10.8 7.6 19.6 17.5 486 185.5 133.8 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=-1.7A, VGS=0V IS=-1.7A, VGS=0V dI/dt=-100A/µs Min. Typ. 21 15 Max. Units -1.2 V ns nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width