SSM9960GH

SSM9960(G)H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 40V 16mΩ 42A S Description The SSM9960H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9960J in TO-251, is available for low-footprint vertical GD S TO-252 (H) This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GH or SSM9960GJ. G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 40 ± 20 42 26 195 45 0.36 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Unit °C/W °C/W 11/16/2004 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM9960(G)H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.032 Max. Units 16 25 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=18A VDS=VGS, ID=250uA VDS=10V, ID=20A 30 18 6 12 9 110 23 10 1500 250 180 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= ± 20V ID=20A VDS=20V VGS=4.5V VDS=20V ID=20A RG=3.3Ω , VGS=10V RD=1Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V dI/dt = 100A/us Min. - Typ. 22 27.4 Max. Units 1.3 V Reverse Recovery Time Reverse Recovery Charge ns nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width