SSM9972GS

SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 60V 18mΩ 60A S Description The SSM9972GS is in a TO-263 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9972GP in TO-220, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. G GD S TO-263 (S) Pb-free lead finish (second-level interconnect) D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 60 ±25 60 38 230 89 0.7 Units V V A A A W W/°C Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 °C °C Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 62 Units °C/W °C/W 2/16/2005 Rev.1.1 www.SiliconStandard.com 1 of 5 SSM9972GP,S Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.06 55 32 8 20 11 58 45 80 280 230 1.7 Max. Units 18 22 3 10 25 ±100 51 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/ ∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=35A VGS=4.5V, ID=25A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VDS=VGS, ID=250uA VDS=10V, ID=35A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS=±25V ID=35A VDS=48V VGS=4.5V VDS=30V ID=35A RG=3.3Ω,VGS=10V RD=0.86Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 3170 5070 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=35A, VGS=0V IS=35A, VGS=0V, dI/dt=100A/µs Min. - Typ. 50 48 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width