SSM9973GM

SSM9973GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS compliant. D1 D1 BV D2 D2 BVDSS R G2 S2 60V 80mΩ 3.9A R DS(ON) ID I SO-8 S1 G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9973M is in an SO-8 package, which is widely preferred for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters. D1 D2 G1 S1 G2 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ± 20 3.9 2.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 12/10/2004 Rev.2.03 www.SiliconStandard.com 1 of 5 SSM9973GM o ELECTRICAL CHARACTERISTICS @ Tj = 25 C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.06 3.5 8 2 4 8 4 20 6 700 80 50 Max. Units 80 100 3 1 25 ±100 13 1120 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA VGS=10V, ID=3.9A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=3.9A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS= ± 20V ID=3.9A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3Ω , VGS=10V RD=30Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=3.9A, VGS=0V IS=3.9A, VGS=0V, dI/dt=100A/µs Min. - Typ. 28 35 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width