SSM9974GS

SSM9974GP,S N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9974 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9974GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM9974GP in TO-220, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. 60V 12mΩ 72A Pb-free; RoHS-compliant TO-220 and TO-263 (D2PAK) G D S G D S TO-220 (suffix P) TO-263 (suffix S) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 Value 60 ±20 72 46 300 104 0.8 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation, TC = 25°C Linear derating factor TSTG TJ Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘ JC RΘ JA Parameter Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Value 1.2 62 Units °C/W °C/W Notes: 1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width