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1N6686US

1N6686US

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    1N6686US - HYPER FAST RECTIFIER - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
1N6686US 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1N6686-1N6687 and 1N6686US-1N6687US 20 AMP 100-200 Volts 40 nsec HYPER FAST RECTIFIER Features: Replaces DO-4 and DO-5 (1N5816, 1N6306) High Current Version of 1N5811 Hyper Fast Recovery PIV to 200 Volts Low Reverse Leakage Current Hermetically Sealed Void-Free Construction3/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount Versions (-US Suffix) TX, TXV, and S-Level Screening Available2/ DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR1 __ __ __ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L L Screening 2/ Package = None TX = TX Level TXV = TXV Level S = S Level ____ = Axial SMS = Surface Mount Square Tab K = 800 V M = 1000 V N = 1200 V L Voltage A = 50 V B = 100 V D = 200 V G = 400 V J = 600 V • • • • • • • • • • • Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 " (1N6686 – 1N6687) Junction to End Tab (1N6686US – 1N6687US) 1N6686 & 1N6686US 1N6687 & 1N6687US Symbol VRRM VRWM VR Io Value 100 200 Units Volts 20 Amps IFSM Top & Tstg RθJL RθJE 375 -65 to +175 4 3.5 Amps ºC ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500. Axial Leaded SMS NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0177B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1N6686-1N6687 and 1N6686US-1N6687US Symbol VF Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 5 Adc, TA = 25ºC, 300 µs pulse) (IF = 20 Adc, TA = 25ºC, 300 µs pulse) (IF = 70 Adc, TA = 25ºC, 300 µs pulse) Instantaneous Forward Voltage Drop (IF = 5 Adc, TA = -65ºC, 300 µs pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC) Case Outline: Axial Max 0.78 0.875 1.0 1.0 50 10 350 40 Units Vdc VF IR IR CJ trr Vdc μA mA pF nsec Tolerances (unless specified) .xx ±.03 .xxx ±.010 Tolerances (unless specified) .xx ±.03 .xxx ±.010 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0177B DOC
1N6686US 价格&库存

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