Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
1N6690-1N6693 and 1N6690US-1N6693US
20 AMP 600-1200 Volts 75 nsec ULTRA FAST RECTIFIER Features:
• • • • • • • • • Replaces DO-4 and DO-5 Ultra Fast Recovery PIV to 1200 Volts Low Reverse Leakage Hermetically Sealed Void-Free Construction3/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount Versions (-US Suffix) and in Button Tab Mounting (See Data Sheet RU0129). • TX, TXV, and S-Level Screening Available2/
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/ 1N66 __ __ __
⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐
L L Screening
2/
Package
= None TX = TX Level TXV = TXV Level S = S Level ____ = Axial SMS = Surface Mount Square Tab
L Voltage
90 = 600 V 91 = 800 V 92 = 1000 V 93 = 1200 V
Maximum Ratings
Peak Repetitive Reverse and DC Blocking Voltage
1N6690 & 1N6690US 1N6691 & 1N6691US 1N6692 & 1N6692US 1N6693 & 1N6693US
Symbol
VRRM VRWM VR Io
Value
600 800 1000 1200
Units
Volts
Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 100ºC) Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 " Junction to End Tab
20
Amps
IFSM Top & Tstg RθJL RθJE
375 -65 to +175 3.0 2.5
Amps ºC ºC/W
Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Specifics Available on Request. 3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500. Axial Leaded SMS
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0143D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
1N6690-1N6693 and 1N6690US-1N6693US
Symbol
TA = 25ºC TA = -55ºC TA = 25ºC TA = 100ºC VF1
VF2
Electrical Characteristics
Instantaneous Forward Voltage Drop (IF = 20 Adc, 300-500 µs pulse) Reverse Leakage Current (Rated VR, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 250mA, TA = 25ºC)
Case Outline: Axial
Max
1.9 2.2 10 2.0 250 75
Units
Vdc μA mA pF nsec
IR1 IR2 CJ trr
Surface Mount Square Tab (SMS)
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0143D
DOC
