2N5015

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2N5015 0.5 AMP, 1000 Volts NPN Transistor FEATURES:      BVCER 1000 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200° C Operating, Gold Eutectic Die Attach  TX, TXV, and S-Level Screening Available Symbol Value Units DESIGNER’S DATA SHEET Part Number / Ordering Information 2N50 15 │ │ │ │ │ │ │ │ └ __ │ │ │ │ │ └ __ └ 1/ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /39 = TO-39 /5 = TO-5 1000V Family / Voltage Maximum Ratings Collector – Emitter Voltage (RBE= 1 kΩ) Collector – Base Voltage Emitter – Base Voltage Collector – Emitter Breakdown Voltage Peak Collector Current Peak Base Current Total Device Dissipation @ TC = 100º C Derate above 100º C Operating and Storage Temperature Thermal Resistance, Junction to Case Notes: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. 4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2% VCER VCBO VEBO BVCEO IC IB PD TOP, TSTG RθJC TO-39 1000 1000 5 450 0.5 250 2.0 20 -65 to +200 50 (typ 22) V V V V A mA W mW/ºC ºC ºC/W TO-5 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043E DOC 2N5015 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Electrical Characteristic 3/ Collector – Emitter Breakdown Voltage (IC = 200 µADC, RBE = 1 KΩ) Collector–Base Breakdown Voltage (IC = 200 µADC) Emitter–Base Breakdown Voltage (IE = 50 µADC) Collector Cutoff Current (VCB = 760 V) (VCB = 760 V, TC = 100°C) Emitter Cutoff Current (VEB= 4V) DC Current Gain 4/ (IC = 20 mADC, VCE = 10 VDC) Collector – Emitter Saturation Voltage (IC = 20 mADC, IB = 5 mADC) Base – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) Current Gain Bandwidth Product (IC = 20 mADC, VCE = 10 VDC, f = 20 MHz) Output Capacitance (VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz) 4/ Symbol BVCER BVCBO BVEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) fT Cob VCC= 125 VDC, IC= 100 mADC, IB1= 20 mADC IB2= 20 mADC pw= 2 us td tr ts tf Min 1000 1000 5 –– –– — 10 30 –– –– 20 –– –– –– –– –– Typ 1300 7 0.08 6 0.003 70 80 0.07 0.7 25 12.5 50 100 1500 450 Max –– –– –– 12 100 20 180 1.8 1.0 –– 30 200 1200 3000 800 Units V V V µAdc µA –– Vdc Vdc MHz pF (IC = 5 mADC, VCE = 10 VDC) Delay Time Rise Time Storage Time Fall Time nsec Case Outline: TO-39 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Case Outline: TO-5 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043E DOC