2SPT6341SD

2SPT6341SD Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET .170 .011 MultiEpitaxial Planar NPN Power Transistor Die Features: • Recommended replacement for the 2N6338 – 6341 series • Die Size: 170 x 180 Mils • Die Thickness: 260 – 330 µm • Bonding Area: Emitter: 30 x 60 Mils Base: 40 x 50 Mils • Maximum Recommended Wire Bonding: Emitter: Al (15 Mils Dia) Base: Al (15 Mils Dia) • Metallization: Top: 60,000Å Al Bottom: 5,500Å Au / Cr / Ni / Au E .180 B Maximum Ratings 4/ Symbol Value Units Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation @ TC = 25ºC Derate above 25ºC Operating & Storage Temperature Maximum Thermal Resistance Electrical Characteristic 4/ Collector – Emitter Breakdown Voltage Collector – Cutoff Current Collector – Cutoff Current E mitter – Cutoff Current DC Current Gain * IC = 50mA VCE = 125 V; VBE = 1.5 V VCE = 125 V; VBE = 1.5 V; T= 150ºC VCB = 180 V VEB = 6 V VCE = 2 V, IC = 500mA VCE = 2 V, IC = 10A VCE = 2 V, IC = 25A IC = 10A, IB = 1 A IC = 25A, IB = 2.5A IC = 10A, IB = 1A IC = 25A, IB = 2.5A VCEO VCBO VEBO IC IC max IB PD Top & Tstg Junction to Case RθJC Symbol BVCEO 3/ ICEX 3/ Min 125 –– –– –– 50 30 12 –– –– –– –– 125 180 6 25 50 10 200 1.143 -65 to +200 0.875 T yp 135 0.020 — 0.020 0.001 120 185 120 0.35 0.93 1.13 1.73 Max –– 10 1 10 100 –– 220 –– 1.0 1.8 1.8 2.5 Volts Volts Volts Amps Amps W W/ºC ºC ºC/W Units Volts µA mA uA uA –– Volts Volts ICBO1 3/ IEBO 3/ hFE1 hFE2 3/ hFE3 VCE(Sat) VB E(Sat) 3/ Collector – Emitter Saturation Voltage* Base – Emitter Saturation Voltage * NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0101A Doc Solid State Devices, Inc. Electrical Characteristic 4/ Current Gain Bandwidth Product Output Capacitance Switching Time Rise Time Storage Time Fall Time 2SPT6341SD www.ssdi-power.com ssdi@ssdi- power.co m 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 Symbol VCE = 10V, IC = 1 A, f = 10MHz VCB = 10V, IE = 0 A, f = 100kHz VCC = 80V, IC = 10A, IB1 = IB2 = 1A fT cob tr tS tf Min 4 –– –– –– –– T yp 6.5 220 60 2000 110 Max –– 300 300 2500 250 Units MHz pF nsec nsec nsec NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 available 3/ 100% die probe tests. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC as applies to Die in TO-3 Package NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0101A Doc