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SDR100S30

SDR100S30

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR100S30 - STANDARD RECOVERY HIGH POWER RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR100S30 数据手册
SDR100S20 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com thru SDR100S50 100 Amp STANDARD RECOVERY HIGH POWER RECTIFIER 200-500 Volt 5 µsec Features:          Low Reverse Leakage Current Single Chip Construction PIV to 500V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1KV Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add Suffix “R” TX, TXV, and S-Level Screening Available 2/ Part Number/Ordering Information 1/ SDR100S__ __ __ │ │ └ Screening 2/ __ = Not Screened │ │ │ │ │ │ │ │ └ │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Pin Configuration (See Table 1) __ = Normal (Cathode to Stud) R = Reverse (Anode to Stud) 20 = 200V 30 = 300V 40 = 400V 50 = 500V Designer’s Data Sheet Family/Voltage *Contact Factory Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25°C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25°C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case SDR100S20 SDR100S30 SDR100S40 SDR100S50 Symbol VRRM VRWM VR Io IFSM TOP & TSTG RJC Value 200 300 400 500 100 1000 -65 to +200 0.85 DO-5 Units Volts Amps Amps ºC ºC/W Notes: 1/ For ordering information, price, operating curves, and availability- contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0153A DOC SDR100S20 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Thru SDR100S50 Symbol IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 VF10 VF11 VF12 VF13 VF14 VF15 VF16 VF17 VF18 VF19 VF20 VF21 VF22 VF23 VF24 VF25 IR1 IR2 IR3 IR4 tRR VR = 5VDC VR = 10VDC CJ Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300µs pulse) Max 990 1100 1200 1250 1325 1290 1310 1100 1250 10 1000 3 450 Typ 850 900 950 990 1030 950 1000 1040 1080 1110 750 815 875 930 975 720 780 850 900 950 680 750 810 870 920 0.1 10 25 75 5 420 330 Units mVDC Instantaneous Forward Voltage Drop (TA = -55ºC, 300µs pulse) mVDC Instantaneous Forward Voltage Drop (TA = 100ºC, 300µs pulse) mVDC Instantaneous Forward Voltage Drop (TA = 125ºC, 300µs pulse) mVDC Instantaneous Forward Voltage Drop (TA = 150ºC, 300µs pulse) mVDC Reverse Leakage Current (Rated VR, TA = 25ºC, 300µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 125ºC, 300µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 150ºC, 300µs pulse minimum) Reverse Recovery Time (IF = 500mA, IR = 1 Amp, IRR = 250mA, TA = 25ºC) Junction Capacitance (TA = 25ºC, f = 1MHz) µA µA µA µA µsec pF Table 1- PIN ASSIGNMENT Code __ R Configuration Normal Reverse Terminal Anode Cathode Stud Cathode Anode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0153A DOC SDR100S20 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Thru SDR100S50 DO-5 Outline (Normal Pin Configuration Shown): NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0153A DOC
SDR100S30
### 物料型号 - 型号为SDR100S,包括SDR100S20、SDR100S30、SDR100S40和SDR100S50,分别对应200V、300V、400V和500V的电压等级。

### 器件简介 - 该器件是100A标准恢复高功率整流器,工作电压范围为200-500伏特,具有5微秒的t筛查时间。该系列器件采用单芯片结构,具有低反向漏电流,最高可达500V的PIV,且500V以上至1KV的更高电压设备也可用。提供快速和超快速恢复版本,并可为反向极性添加后缀"R"。

### 引脚分配 - 引脚配置分为正常(阴极到柱)和反向(阳极到柱)两种配置。具体配置如下表所示: | 代码 | 配置 | 终端 | 柱 | | --- | --- | --- | --- | | | 正常 | 阳极 | 阴极 | | R | 反向 | 阴极 | 阳极 |

### 参数特性 - 最大额定值: - 峰值重复反向和DC阻断电压:200V、300V、400V、500V。 - 平均整流前向电流(60Hz正弦波,TA=25°C):100A。 - 峰值浪涌电流(8.3ms脉冲,半正弦波,TA=25°C):1000A。 - 工作和存储温度:-65至+200°C。 - 最大总热阻(结到外壳):0.85°C/W。 - 电气特性: - 瞬态前向电压降(TA=25°C,300us脉冲):在不同电流下有不同的电压降值。 - 反向漏电流:在不同温度和额定电压下有不同的漏电流值。 - 反向恢复时间(IF=500mA,IR=1A,IRR=250mA,TA=25°C):3至5微秒。 - 结电容(TA=25°C,f=1MHz):在不同电压下的电容值。

### 功能详解 - 该整流器主要用于将交流电转换为直流电,适用于高功率应用。其特点包括低反向漏电流、高PIV、低热阻和快速恢复时间,适合需要高可靠性和高性能的应用场景。

### 应用信息 - 适用于需要高功率整流的场合,如电源、电机控制、电力传输等领域。

### 封装信息 - 封装为DO-5,具体引脚配置图已在文档中提供。
SDR100S30 价格&库存

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