0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SDR100S40

SDR100S40

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR100S40 - STANDARD RECOVERY HIGH POWER RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR100S40 数据手册
SDR100S20 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com thru SDR100S50 100 Amp STANDARD RECOVERY HIGH POWER RECTIFIER 200-500 Volt 5 µsec Features:          Low Reverse Leakage Current Single Chip Construction PIV to 500V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1KV Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add Suffix “R” TX, TXV, and S-Level Screening Available 2/ Part Number/Ordering Information 1/ SDR100S__ __ __ │ │ └ Screening 2/ __ = Not Screened │ │ │ │ │ │ │ │ └ │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Pin Configuration (See Table 1) __ = Normal (Cathode to Stud) R = Reverse (Anode to Stud) 20 = 200V 30 = 300V 40 = 400V 50 = 500V Designer’s Data Sheet Family/Voltage *Contact Factory Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25°C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25°C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case SDR100S20 SDR100S30 SDR100S40 SDR100S50 Symbol VRRM VRWM VR Io IFSM TOP & TSTG RJC Value 200 300 400 500 100 1000 -65 to +200 0.85 DO-5 Units Volts Amps Amps ºC ºC/W Notes: 1/ For ordering information, price, operating curves, and availability- contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0153A DOC SDR100S20 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Thru SDR100S50 Symbol IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc IF = 10Adc IF = 25Adc IF = 50Adc IF = 75Adc IF = 100Adc VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 VF10 VF11 VF12 VF13 VF14 VF15 VF16 VF17 VF18 VF19 VF20 VF21 VF22 VF23 VF24 VF25 IR1 IR2 IR3 IR4 tRR VR = 5VDC VR = 10VDC CJ Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300µs pulse) Max 990 1100 1200 1250 1325 1290 1310 1100 1250 10 1000 3 450 Typ 850 900 950 990 1030 950 1000 1040 1080 1110 750 815 875 930 975 720 780 850 900 950 680 750 810 870 920 0.1 10 25 75 5 420 330 Units mVDC Instantaneous Forward Voltage Drop (TA = -55ºC, 300µs pulse) mVDC Instantaneous Forward Voltage Drop (TA = 100ºC, 300µs pulse) mVDC Instantaneous Forward Voltage Drop (TA = 125ºC, 300µs pulse) mVDC Instantaneous Forward Voltage Drop (TA = 150ºC, 300µs pulse) mVDC Reverse Leakage Current (Rated VR, TA = 25ºC, 300µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 125ºC, 300µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 150ºC, 300µs pulse minimum) Reverse Recovery Time (IF = 500mA, IR = 1 Amp, IRR = 250mA, TA = 25ºC) Junction Capacitance (TA = 25ºC, f = 1MHz) µA µA µA µA µsec pF Table 1- PIN ASSIGNMENT Code __ R Configuration Normal Reverse Terminal Anode Cathode Stud Cathode Anode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0153A DOC SDR100S20 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Thru SDR100S50 DO-5 Outline (Normal Pin Configuration Shown): NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0153A DOC
SDR100S40
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种通信接口和外设,适用于工业控制、消费电子等领域。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考数据手册。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB至512KB的闪存和20KB的SRAM。

5. 功能详解:具备多种功能模块,如ADC、DAC、定时器、通信接口(UART、SPI、I2C)等。

6. 应用信息:适用于需要高性能处理和丰富外设的嵌入式系统,如工业自动化、医疗设备、智能家居等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm,适用于表面贴装技术。
SDR100S40 价格&库存

很抱歉,暂时无法提供与“SDR100S40”相匹配的价格&库存,您可以联系我们找货

免费人工找货