SDR10GSMSTXV

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR10D thru SDR10M and SDR10DSMS thru SDR10MSMS Series 10 AMPS 200 ─ 1000 VOLTS 5 µs STANDARD RECOVERY RECTIFIER FEATURES: Designer’s Data Sheet Part Number/Ordering Information 1/ SDR10 __ __ __ │ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Voltage/Family D = 200V G = 400V J = 600V K = 800 V M = 1000 V • • • • • • • • • • • Standard Recovery: 5 µs maximum 4/ PIV to 1000 Volts Hermetically Sealed Low Reverse Leakage Current Single Chip Construction High Surge Rating Replaces Larger DO-4 Rectifiers Low Thermal Resistance Available in Axial & Square Tab Versions TX, TXV, and S-Level Screening Available 2/ Faster Recovery Devices Available - Contact Factory MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage SDR10D & SDR10DSMS SDR10G & SDR10GSMS SDR10J & SDR10JSMS SDR10K & SDR10KSMS SDR10M & SDR10MSMS SYMBOL VRRM VRWM VR IO IFSM TJ and TSTG RθJL RθJE Axial Leaded VALUE 200 400 600 800 1000 10.0 150 -65 to +175 8 4 UNIT Volts Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25°C ) Peak Surge Current (8.3 ms pulse, half sine wave, superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C) Amps Amps °C °C/W SMS Operating & Storage Temperature Thermal Resistance NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 4/ IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C Junction to Lead for Axial, L =.125" Junction to End Tab for Surface Mount NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00001C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR10D thru SDR10M and SDR10DSMS thru SDR10MSMS Series ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS Instantaneous Forward Voltage Drop IF = 10.0 Adc, 300-500μs pulse Reverse Leakage Current Rated VR, 300μs pulse minimum Junction Capacitance VR = 10 Vdc, f = 1MHz, TA = 25°C Reverse Recovery Time IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C Package Outlines: DIMENSIONS (inches) DIM. SYMBOL TA = +25°C TA = -55°C TA = +25°C TA =+100°C VF1 VF2 IR1 IR2 CJ trr VALUE MAX UNIT 1.25 1.40 5 200 80 5 Vdc μA pF µs DIMENSIONS (inches) A B C D Minimum --.210 .037 1.000 Maximum .170 .250 .043 --- DIM. A B C D Minimum .170 .260 .020 .002 Maximum .180 .300 .030 --- AXIAL SMS NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00001C DOC