SDR1210JUFUBTXV

SDR1210JUFUBTXV

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR1210JUFUBTXV - 12 AMP 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR1210JUFUBTXV 数据手册
SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1210UF / SDR1212UF SERIES 12 AMP 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER FEATURES: DESIGNER'S DATA SHEET Part Number /Ordering Information SDR12 12 J UF UB TX 1/ Screening: 2/ _ = Not Screened TX = TX Level TXV= TXV Level S = Space Level Lead Bending: 3/ 4/ _ UB DB Package: 3/ J S.5 HB HE Voltage: 10 12 = Straight = Up Bend = Down Bend = TO-257 = SMD .5 = SedPack I (Leadless) = SepPack I (Leaded) = 1000V = 1200V • • • • • • • • Ultra Fast Recovery: 75nsec Maximum High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Custom Lead Forming Available Eutectic Die Attach TX, TXV and S Level Screening Available Maximum Ratings 3/ Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current. (Resistive load, 60Hz, Sine Wave, TA = 25oC) SYMBOL SDR1210 SDR1212 VRRM VRWM VR Io IFSM TOP & Tstg RΘJC VALUE 1000 1200 12 125 -65 TO +175 1.4 0.8 0.8 SedPack I (HE) UNITS Volts Amps Amps o Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case C TO-257 (J) SMD.5 (S.5) SedPack I (HB & HE) o C/W TO-257 (J) SMD.5 (S.5) SedPack I (HB) 2 1 2 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0066A SDR1210UF / SDR1212UF SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Electrical Characteristics 5/ SYMBOL IF = 8A IF = 12A TA = -55oC TA = 100oC TA = 25oC TA = 100oC VF1 VF2 VF3 VF4 IR1 IR2 CJ tRR MIN --------- MAX 1.50 1.60 1.60 1.40 30 500 50 75 UNITS VDC VDC µA pF nsec Instantaneous Forward Voltage Drop (TA = 25oC, 300 - 500µsec Pulse ) Instantaneous Forward Voltage Drop (IF = 8A, 300 - 500µsec pulse ) Reverse Leakage Current (80% of Rated VR, 300µs pulse min.) Junction Capacitance (VR = 10VDC, TA = 25oC, f = 1MHz) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25oC) NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations Available for M and Z (TO-254 and TO-254Z) Packages Only. 5/ All Electrical Characteristics @25oC, Unless Otherwise Specified. Available Part Numbers: SDR1210JUF SDR1210JUFDB SDR1210JUFUB SDR1210S.5UF SDR1210HBUF SDR1210HEUF SDR1212JUF SDR1212JUFDB SDR1212JUFUB SDR1212S.5UF SDR1212HBUF SDR1212HEUF PIN ASSIGNMENT PACKAGE TO-257 (J) SMD.5 (S.5) SedPack 1 (HB) SedPack 1 (HE) Pin 1 Cathode Cathode Cathode Cathode Pin 2 Anode Anode Anode Anode Pin 3 Anode Anode N/A N/A
SDR1210JUFUBTXV
物料型号: - SDR1210UF/SDR1212UF系列

器件简介: - 该系列为1000-1200伏特超快速整流器,具有75纳秒的最大超快速恢复时间,高浪涌额定值,低反向漏电流,低结电容,并且采用密封封装。可提供定制引脚成型,共晶芯片连接,以及TX、TXV和S级筛选。

引脚分配: - TO-257 (J)封装:Pin 1为阴极,Pin 2和Pin 3为阳极。 - SMD.5 (S.5)封装:Pin 1为阴极,Pin 2为阳极,Pin 3不存在。 - SedPack 1 (HB)封装:Pin 1为阴极,Pin 2为阳极,Pin 3不存在。 - SedPack 1 (HE)封装:Pin 1为阴极,Pin 2为阳极,Pin 3不存在。

参数特性: - 最大重复反向电压和直流阻断电压:SDR1210为1000伏特,SDR1212为1200伏特。 - 平均整流前向电流(60Hz正弦波,TA=25°C):12安培。 - 峰值浪涌电流(8.3毫秒半正弦波,TA=25°C):125安培。 - 最大热阻(结到外壳):TO-257(J)为1.4°C/W,SMD.5(S.5)为0.8°C/W,SedPack I (HB & HE)为0.8°C/W。

功能详解: - 该系列整流器具有超快速恢复特性,最大恢复时间为75纳秒,适用于需要快速响应的应用场合。

应用信息: - 适用于需要高电压、大电流和快速响应的整流应用,如电源、电机驱动等。

封装信息: - 提供TO-257(J)、SMD.5(S.5)、SedPack I (HB)和SedPack I (HE)等多种封装形式。
SDR1210JUFUBTXV 价格&库存

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