SDR12JSMSTXV

SDR12 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR12 ___ ___ ___ │ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ │ │ └ Package Type ___ = Axial │ SMS = Surface Mount Square Tab │ └ Family/Voltage D = 200 V G = 400V J = 600 V K = 800 V M = 1000 V 12 AMPS 200 - 1000 VOLTS 5 μsec STANDARD RECOVERY RECTIFIER FEATURES: • • • • • • • • Standard Recovery: 5 μsec maximum PIV up to 800 Volts High Current Operation up to 12 A Hermetically Sealed Single Chip Construction Low Thermal Resistance TX, TXV, and Space Level Screening Available2/ Fast and Ultrafast Recovery Versions Available. Contact Factory. MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA ≤ 55oC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Superimposed on IO, allow junction to reach equilibrium between pulses, TA = 25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 0.125” (Axial Lead) Junction to End Tab (Surface Mount ) 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request. Symbol SDR12D SDR12G SDR12J SDR12K SDR12M VRRM VRWM VR IO IFSM TOP & Tstg RθJL RθJE Axial Value 200 400 600 800 1000 12 150 -65 to +175 6 4 Units Volts Amps Amps o C o C/W Surface Mount Square Tab (SMS) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0091B DOC SDR12 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 12 Amps, TA = 25oC, 300μsec Pulse) Reverse Leakage Current (At Rated VR, 300μsec pulse minimum) Junction Capacitance (VR = 10 VDC, TA = 25oC, f = 1 MHz) Reverse Recovery Time (IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC) Case Outline: (Axial) TA = 25oC TA = -55oC TA = 25oC TA = 100oC Symbol VF1 VF2 IR1 IR2 CJ trr Min –– –– –-–– –– –– Max 1.30 1.50 5.0 200 80 5 MIN –– 0.140” 0.057” 0.500” Unit Volts Volts μA μA pF μs MAX 0.190” 0.180” 0.063” –– DIM A B C D Case Outline: (SMS) DIM A B C D MIN 0.195” 0.190” 0.020” 0.002” MAX 0.210” 0.230” 0.030” –– Note: Dimensions prior to soldering. NOTES: Consult manufacturing for operating curves. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0091B DOC