0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SDR1D_1

SDR1D_1

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR1D_1 - ULTRA FAST RECTIFIER - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SDR1D_1 数据手册
SDR1D thru SDR1N Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR1 __ __ __ │ │ └ Screening 2/ ││ __ = Not Screened ││ TX = TX Level ││ TXV = TXV ││ S = S Level ││ │ └ Package Type __ = Axial Leaded │ │ D = 200V K = 800V └ Family G = 400V M = 1000V J = 600V N = 1200V • • • • • • • • • 1.0 AMPS 200 ─ 1200 VOLTS 50 – 80 nsec ULTRA FAST RECTIFIER FEATURES: Ultra Fast Recovery: 50-80 ns Max @ 25ºC 4/ 80-130 ns Max @ 100ºC 4/ • Single Chip Construction PIV to 1200 Volts Low Reverse Leakage Current Hermetically Sealed For High Efficiency Applications Metallurgically Bonded 2/ TX, TXV, and S-Level Screening Available Available in Surface Mount (SM) and Square Tab Surface Mount (SMS) Versions (Ref. RU0003) Hyper Fast Version available (Ref. RH0119) MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage Rectified Forward Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25ºC) SYMBOL SDR1D SDR1G SDR1J SDR1K SDR1M SDR1N VALUE 200 400 600 800 1000 1200 1 25 -65 to +175 45 Axial Leaded UNIT VRRM VRWM VR IO IFSM TOP and TSTG RθJL Volts Amp Amps ºC ºC/W Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25ºC) Operating & Storage Temperature Thermal Resistance, Junction to Lead, L = 3/8” NOTES: 1/ 2/ 3/ 4/ 5/ For Ordering Information, Price, and Availability- Contact Factory. Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Unless Otherwise Specified, All Electrical Characteristics @25ºC. Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. For information on operating curves, contact factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0005H DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1D thru SDR1N 3/ ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 1Adc, 300- 500 μs Pulse, TA = 25ºC) Instantaneous Forward Voltage Drop (IF = 1Adc, 300- 500 μs Pulse, TA = -55ºC) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 25ºC) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 100ºC) Junction Capacitance (VR = 10Vdc, TA = 25ºC , f = 1MHz) Maximum Reverse Recovery Time 4/ CHARACTERISTICS SDR1D thru SDR1J SDR1K thru SDR1N SDR1D thru SDR1J SDR1K thru SDR1N SYMBOL VALUE VF1 VF2 1.70 1.90 2.10 2.30 UNIT Vdc Vdc μA μA pf ns IR1 IR2 CJ SDR1D thru SDR1J SDR1K SDR1M SDR1N 5 500 24 50 60 70 80 trr Axial Leaded Case Outline : 5/ DIM. A B C D DIMENSIONS MIN. ----.027” .95” MAX. .150” .190” .033” --- NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0005H DOC
SDR1D_1 价格&库存

很抱歉,暂时无法提供与“SDR1D_1”相匹配的价格&库存,您可以联系我们找货

免费人工找货