SDR1M

SDR1D thru SDR1N Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR1 __ __ __ │ │ └ Screening 2/ ││ __ = Not Screened ││ TX = TX Level ││ TXV = TXV ││ S = S Level ││ │ └ Package Type __ = Axial Leaded │ │ D = 200V K = 800V └ Family G = 400V M = 1000V J = 600V N = 1200V • • • • • • • • • 1.0 AMPS 200 ─ 1200 VOLTS 50 – 80 nsec ULTRA FAST RECTIFIER FEATURES: Ultra Fast Recovery: 50-80 ns Max @ 25°C 4/ 80-130 ns Max @ 100°C 4/ • Single Chip Construction PIV to 1200 Volts Low Reverse Leakage Current Hermetically Sealed For High Efficiency Applications Metallurgically Bonded TX, TXV, and S-Level Screening Available Available in Surface Mount (SM) and Square Tab Surface Mount (SMS) Versions (Ref. RU0003) Hyper Fast Version available (Ref. RH0119) MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage Rectified Forward Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) SYMBOL SDR1D SDR1G SDR1J SDR1K SDR1M SDR1N VALUE 200 400 600 800 1000 1200 1 25 -65 to +175 35 UNIT VRRM VRWM VR IO IFSM TOP and TSTG RθJL Volts Amp Amps °C °C/W Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C) Operating & Storage Temperature Thermal Resistance, Junction to Lead, L = 3/8” Axial Leaded NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0005F DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1D thru SDR1N 3/ ELECTRICAL CHARACTERISTICS CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 1Adc, 300- 500 μs Pulse, TA = 25°C) Instantaneous Forward Voltage Drop (IF = 1Adc, 300- 500 μs Pulse, TA = -55°C) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 25°C) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 100°C) Junction Capacitance (VR = 10Vdc, TA = 25°C , f = 1MHz) Maximum Reverse Recovery Time 4/ SDR1D thru SDR1J SDR1K SDR1M SDR1N SDR1D thru SDR1J SDR1K thru SDR1N SDR1D thru SDR1J SDR1K thru SDR1N SYMBOL VALUE VF1 VF2 1.70 1.90 2.10 2.30 UNIT Vdc Vdc μA μA pf ns IR1 IR2 CJ trr 5 500 24 50 60 70 80 Axial Leaded Case Outline 5/: DIM. A B C D DIMENSIONS MIN. ----.027” .95” MAX. .150” .190” .033” --- NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. 5/ For information on operating curves, contact factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0005F DOC