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SDR1NHFTXV

SDR1NHFTXV

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR1NHFTXV - 1AMPS, 50thru 1200VOLTS 35nsec Hyper Fast Recovery Rectifier - Solid States Devices, In...

  • 数据手册
  • 价格&库存
SDR1NHFTXV 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1AHF & SDR1AHFSMS thru SDR1NHF & SDR1NHFSMS 1 AMPS, 50 thru 1200 VOLTS 35 nsec Hyper Fast Recovery Rectifier Designer’s Data Sheet Part Number/Ordering Information 1/ SDR __ __ __ │ │ └ Screening 2/ ││ __ = Not Screened ││ TX = TX Level ││ TXV = TXV ││ S = S Level ││ │ └ Package Type __ = Axial Leaded │ SMS = Surface Mount Square Tab │ │ └ Voltage/Family SDR1AHF = 50V SDR1JHF = 600V SDR1BHF = 100V SDR1KHF = 800V SDR1DHF = 200V SDR1MHF = 1000V SDR1GHF = 400V SDR1NHF = 1200V • • • • • • • • FEATURES: Hyper Fast Recovery: 35 nsec maximum PIV up to 1200 Volts Hermetically Sealed Void Free Single Chip Construction For High Efficiency Applications Low Reverse Leakage TX, TXV, and Space Level Screening Available2/ Avalanche Breakdown Guaranteed Hyper Fast Recovery Replacement for 1N6620-6625 MAXIMUM RATINGS SDR1AHF SDR1BHF SDR1DHF SDR1GHF SDR1JHF SDR1KHF SDR1MHF SDR1NHF Symbol Value 50 100 200 400 600 800 1000 1200 Units Peak Repetitive Reverse Voltage and DC Blocking Voltage VRRM VRWM VR Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) IO SDR1A - 1JHF SDR1K - 1NHF 1.0 25 7 -65 to +175 35 28 Amps Amps o Peak Surge Current @ TA = 25oC (8.3 ms Pulse, Half Sine Wave or equivalent Square Wave) IFSM TOP & Tstg RθJL RθJE Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 0.375” (Axial Lead) Junction to End Tab (Surface Mount) NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. C o C/W Axial Leaded (__) Square Tab Surface Mount (SMS) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0119G DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1AHF & SDR1AHFSMS thru SDR1NHF & SDR1NHFSMS ELECTRICAL CHARACTERISTICS SDR1AHF – SDR1JHF Instantaneous Forward Voltage Drop (IF = 1 Amps, TA = 25oC, Pulsed) SDR1KHF – SDR1NHF SDR1AHF – SDR1JHF Instantaneous Forward Voltage Drop (IF = 1 Amps, TA = -55oC, Pulsed) SDR1KHF – SDR1NHF TA = 25oC Reverse Leakage Current (At Rated VR, pulsed) TA = 100oC Reverse Recovery Time (IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC) Junction Capacitance (VR = 10 VDC, TA = 25oC, f = 1 MHz) Case Outline: (Axial) Symbol VF1 VF2 IR1 IR2 trr CJ Min –– –– –– –– –– –– –– –– DIM A B C D Max 3.30 3.50 3.40 3.60 5.0 200 35 20 MIN –– –– 0.027” 0.950” Unit Volts Volts μA ns pF MAX 0.150” 0.190” 0.033” –– Case Outline: (SMS) DIM A B C D MIN 0.134” 0.200” 0.022” 0.002” MAX 0.153” 0.280” 0.028” –– Note: Dimensions prior to soldering. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0119G DOC
SDR1NHFTXV 价格&库存

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