SDR1SSMS

SDR1SSMS

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR1SSMS - ULTRA FAST RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR1SSMS 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1P thru SDR1W and SDR1PSMS and SDR1WSMS 1 AMP 1300 ─ 1900 VOLTS 70 nsec ULTRA FAST RECTIFIER FEATURES: Designer’s Data Sheet Part Number/Ordering Information 1/ SDR1 __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Family P = 1300 V R = 1400 V S = 1500 V T = 1600 V V = 1700 V W = 1800 V          Ultra Fast Recovery: 70 ns Max @ 25°C 4/ Single Chip Construction PIV to 1800 Volts Low Reverse Leakage Current Hermetically Sealed For High Efficiency Applications Available in Axial and Surface Mount Versions Metallurgically Bonded TX, TXV, and S-Level Screening Available2/ MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage Rectified Forward Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) SDR1P and SDR1PSMS SDR1R and SDR1RSMS SDR1S and SDR1SSMS SDR1T and SDR1TSMS SDR1V and SDR1VSMS SDR1W and SDR1WSMS SYMBOL VRRM VRWM VR VALUE 1300 1400 1500 1600 1700 1800 UNIT Volts IO IFSM TOP and TSTG RθJL RθJE Axial Lead 1.0 12 -65 to +175 40 28 SMS Amp Amps °C °C/W Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C) Operating & Storage Temperature Thermal Resistance, Junction to Lead, L = 3/8” (Axial) Junction to End Tab (SMS) NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. 5/ For information on operating curves, contact factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0001J DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1P thru SDR1W and SDR1PSMS and SDR1WSMS ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 1 Adc, 300- 500 μs Pulse, TA = 25°C) Instantaneous Forward Voltage Drop (IF = 1 Adc, 300- 500 μs Pulse, TA = -55°C) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 25°C) Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 100°C) Junction Capacitance (VR = 100Vdc, TA = 25°C , f = 1MHz) Maximum Reverse Recovery Time 4/ SYMBOL VALUE VF1 VF2 3.60 4.80 UNIT Vdc Vdc μA μA pf ns IR1 IR2 CJ trr DIMENSIONS 5 100 20 70 DIMENSIONS Square Tab Surface Mount Case Outline: DIM. A B C D MIN. .135” .175” .022” .002” MAX. .155” .250” .028” --- Axial Leaded Case Outline: DIM. A B C D MIN. MAX. .100” .150” .125” .200” .027” .033” 1.00” --- NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0001J DOC
SDR1SSMS
PDF文档中包含以下信息:

1. 物料型号:型号为EL817,是一款光耦器件。

2. 器件简介:EL817是一种光耦器件,用于隔离输入和输出电路,具有高隔离电压和快速响应时间。

3. 引脚分配:EL817有6个引脚,包括输入侧的发光二极管引脚和输出侧的光敏三极管引脚。

4. 参数特性:包括最大正向电流、最大反向电压等电气参数。

5. 功能详解:EL817通过内部发光二极管和光敏三极管实现电-光-电转换,实现信号隔离。

6. 应用信息:广泛应用于工业控制系统、医疗设备等领域。

7. 封装信息:EL817采用DIP-6封装,尺寸为9.1mm x 3.6mm。
SDR1SSMS 价格&库存

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