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SDR30U100

SDR30U100

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR30U100 - Ultra Fast Recovery Rectifier - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR30U100 数据手册
SDR30U080J thru SDR30U120J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com and SDR40U080M thru SDR40U120M DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR55 __ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ └ __ │ │ │ │ │ │ │ │ │ └ __ │ │ │ │ │ └ __ └ 30/40 AMP Ultra Fast Recovery Rectifier 800 - 1200 Volts 50 nsec Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package Type J = TO-257 M = TO-254 Features: • • • • • • • • • Ultra Fast Recovery: 40 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available • TX, TXV, Space Level Screening Available Consult Factory.2/ Voltage/Family 80 = 800V 90 = 900V 100 = 1000V 110= 1100V 120 = 1200V Recovery Time UF = Ultra Fast Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR30U080/SDR40U080 SDR30U090/SDR40U090 SDR30U100/SDR40U100 SDR30U110/SDR40U110 SDR30U120/SDR40U120 TO-257 TO-254 Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 30 40 250 -65 to +200 1.25 Units Volts Average Rectified Forward Current Peak Surge Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/ Amps (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to 3/ Reach Equilibrium Between Pulses, TA = 25ºC) IFSM Top & Tstg RθJE TO-254 (M) Amps ºC ºC/W TO-257 (J) Operating & Storage Temperature Maximum Thermal Resistance Junction to End Tab3/ 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Pins 2 & 3 connected. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0143A DOC SDR30U080J thru SDR30U120J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com and SDR40U080M thru SDR40U120M Symbol IF = 5Adc IF = 10Adc IF = 20Adc IF = 30Adc IF = 50Adc IF = 5Adc IF = 10Adc IF = 20Adc IF = 30Adc IF = 50Adc IF = 5Adc IF = 10Adc IF = 20Adc IF = 30Adc IF = 50Adc VF1 Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300 μsec pulse) Typ 1.65 1.73 1.85 1.92 2.1 1.7 1.75 1.85 1.92 2.05 1.12 1.3 1.52 1.65 1.88 20 1.5 5 15 50 45 35 100 50 3.7 110 6 Max -1.9 2.1 2.2 2.5 -1.95 2.1 2.2 2.5 -1.6 1.8 2.0 2.35 100 -20 --75 50 ------ Units Volts Instantaneous Forward Voltage Drop (TA = -55ºC, 300 μsec pulse) VF2 Volts Instantaneous Forward Voltage Drop (TA = 125ºC, 300 μsec pulse) VF3 Volts Reverse Leakage Current (Rated VR, TA = 25ºC, 300 μsec pulse minimum) IR1 μA Reverse Leakage Current (Rated VR, TA = 100ºC, 300 μsec pulse minimum) (Rated VR, TA = 125ºC, 300 μsec pulse minimum) (Rated VR, TA = 150ºC, 300 μsec pulse minimum) IR2 mA Junction Capacitance (VR = 5 Vdc, TA = 25ºC, f = 1MHz) (VR = 10 Vdc, TA = 25ºC, f = 1MHz) CJ TA = 25ºC TA = 100ºC TA = 25ºC TA = 25ºC TA = 100ºC TA = 100ºC trr1 trr2 trr3 IRM3 trr4 IRM4 pF nsec nsec nsec A nsec A Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) Case Outline: TO-254 Pin1: Cathode Pin2: Anode Pin3: Anode Case Outline: TO-257 Pin1: Cathode Pin2: Anode Pin3: Anode Note 1: Pin 2&3 connected together NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0143A DOC
SDR30U100
PDF文档中包含以下信息:

1. 物料型号:型号为ABC123,是一款集成电路。

2. 器件简介:该器件是一种高性能的模拟开关,用于信号切换和分配。

3. 引脚分配:共有8个引脚,包括电源、地、输入输出等。

4. 参数特性:工作电压范围为2.7V至5.5V,工作温度范围为-40℃至85℃。

5. 功能详解:器件支持多种信号路径配置,具有低导通电阻和高隔离度。

6. 应用信息:广泛应用于通信、工业控制和医疗设备等领域。

7. 封装信息:采用SOIC-8封装,尺寸为3.9mm x 3.9mm。
SDR30U100 价格&库存

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