SDR30U080J thru SDR30U120J Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
and
SDR40U080M thru SDR40U120M
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDR55
__
│ │ │ │ │ │ │ │ │ │ │ │ │ │ │ └
__
│ │ │ │ │ │ │ │ │ └
__
│ │ │ │ │ └
__
└
30/40 AMP Ultra Fast Recovery Rectifier
800 - 1200 Volts 50 nsec
Screening 2/
__ = Not Screened TX = TX Level TXV = TXV Level S = S Level
Package Type
J = TO-257 M = TO-254
Features:
• • • • • • • • • Ultra Fast Recovery: 40 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available • TX, TXV, Space Level Screening Available Consult Factory.2/
Voltage/Family
80 = 800V 90 = 900V 100 = 1000V 110= 1100V 120 = 1200V
Recovery Time
UF = Ultra Fast
Maximum Ratings
Peak Repetitive Reverse and DC Blocking Voltage SDR30U080/SDR40U080 SDR30U090/SDR40U090 SDR30U100/SDR40U100 SDR30U110/SDR40U110 SDR30U120/SDR40U120
TO-257 TO-254
Symbol
VRRM VRWM VR Io
Value
800 900 1000 1100 1200 30 40 250 -65 to +200 1.25
Units
Volts
Average Rectified Forward Current Peak Surge Current
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/
Amps
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to 3/ Reach Equilibrium Between Pulses, TA = 25ºC)
IFSM Top & Tstg RθJE
TO-254 (M)
Amps ºC ºC/W
TO-257 (J)
Operating & Storage Temperature Maximum Thermal Resistance
Junction to End Tab3/
1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Pins 2 & 3 connected.
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0143A
DOC
SDR30U080J thru SDR30U120J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
and
SDR40U080M thru SDR40U120M
Symbol
IF = 5Adc IF = 10Adc IF = 20Adc IF = 30Adc IF = 50Adc IF = 5Adc IF = 10Adc IF = 20Adc IF = 30Adc IF = 50Adc IF = 5Adc IF = 10Adc IF = 20Adc IF = 30Adc IF = 50Adc VF1
Electrical Characteristics
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 μsec pulse)
Typ
1.65 1.73 1.85 1.92 2.1 1.7 1.75 1.85 1.92 2.05 1.12 1.3 1.52 1.65 1.88 20 1.5 5 15 50 45 35 100 50 3.7 110 6
Max
-1.9 2.1 2.2 2.5 -1.95 2.1 2.2 2.5 -1.6 1.8 2.0 2.35 100 -20 --75 50 ------
Units
Volts
Instantaneous Forward Voltage Drop
(TA = -55ºC, 300 μsec pulse)
VF2
Volts
Instantaneous Forward Voltage Drop
(TA = 125ºC, 300 μsec pulse)
VF3
Volts
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 μsec pulse minimum)
IR1
μA
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 μsec pulse minimum) (Rated VR, TA = 125ºC, 300 μsec pulse minimum) (Rated VR, TA = 150ºC, 300 μsec pulse minimum) IR2
mA
Junction Capacitance
(VR = 5 Vdc, TA = 25ºC, f = 1MHz) (VR = 10 Vdc, TA = 25ºC, f = 1MHz)
CJ TA = 25ºC TA = 100ºC TA = 25ºC TA = 25ºC TA = 100ºC TA = 100ºC trr1 trr2 trr3 IRM3 trr4 IRM4
pF nsec nsec nsec A nsec A
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) Case Outline: TO-254
Pin1: Cathode Pin2: Anode Pin3: Anode
Case Outline: TO-257
Pin1: Cathode Pin2: Anode Pin3: Anode
Note 1: Pin 2&3 connected together
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0143A
DOC
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