SDR3KHF_1

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR3KHF & SDR3KHFSMS thru SDR3NHF & SDR3NHFSMS 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier Features: • • • • • • • • Hyper Fast Recovery: 35 nsec maximum PIV to 1200 Volts Hermetically Sealed Void Free Construction For High Efficiency Applications Single Chip Construction Low Reverse Leakage TX, TXV, S Level screening Available2/ DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SDR3 ___ HF ___ ___ Screening 2/ │ │ └ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ │ Package Type ___ = Axial │ └ SMS = Surface Mount Square Tab │ Family/Voltage └ K = 800 V M = 1000 V N = 1200 V Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR3KHF SDR3MHF SDR3NHF VRRM VRSM VR Io IFSM TOP & TSTG 800 1000 1200 3.0 70 -65 to +175 16 12 Volts Amps Amps ºC ºC/W Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TL = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TL = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 1/4" Junction to Tabs RθJE 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request. Axial Lead Diode SMS NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0097B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR3DHF & SDR3DHFSMS thru SDR3NHF & SDR3NHFSMS Symbol Max Units Electrical Characteristic Instantaneous Forward Voltage Drop (TA = 25ºC, pulsed) Instantaneous Forward Voltage Drop (TA = -55ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC, pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR = 10VDC, f = 1MHz, TA = 25ºC) Case Outline: (Axial) IF IF IF IF = 1A = 3A = 1A = 3A VF1 VF2 VF3 VF4 1.9 3.1 2.0 3.2 10 300 35 30 DIM A B C D MIN –– –– 0.047” 0.950” VDC VDC µA µA nsec pF MAX 0.165” 0.220” 0.053” –– IR1 IR2 tRR CJ Case Outline: (SMS) DIM A B C D MIN 0.172” 0.180” 0.022” 0.002” MAX 0.180” 0.280” 0.028” -- NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0097B DOC