SDR3NHF

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR3KHF & SDR3KHFSMS thru SDR3NHF & SDR3NHFSMS 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier Axial Lead Diode SMS DESIGNER’S DATA SHEET Features: • Hyper Fast Recovery: 35 nsec maximum • PIV to 1200 Volts • Hermetically Sealed • Void Free Construction • For High Efficiency Applications • Single Chip Construction • Low Reverse Leakage • TX, TXV, S Level screening Available Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR3KHF SDR3MHF SDR3NHF VRRM VRSM VR Io IFSM TOP & TSTG 800 1000 1200 3.0 70 -65 to +175 20 14 Volts Amps Amps ºC ºC/W Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs R?JE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0097A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR3DHF & SDR3DHFSMS thru SDR3NHF & SDR3NHFSMS Symbol SDR3KHF – SDR3NHF SDR3KHF – SDR3NHF Max Units Electrical Characteristic Instantaneous Forward Voltage Drop (TA = 25ºC, pulsed) Instantaneous Forward Voltage Drop (TA = -55ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC, pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR = 10VDC, f = 1MHz, TA = 25ºC) Case Outline: (Axial) 3A 1A 1A VF1 VF2 VF3 3.1 1.9 2.0 10 300 35 30 DIM A B C D MIN –– –– 0.047” 0.950” VDC VDC µA µA nsec pF MAX 0.165” 0.220” 0.053” –– IR1 IR2 tRR CJ Case Outline: (SMS) DIM A B C D MIN 0.172” 0.180” 0.022” 0.002” MAX 0.180” 0.280” 0.028” --