SDR4K

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR4G - SDR4N and SDR4GSMS – SDR4NSMS 3 AMP 400 – 1200 Volts 50-80 nsec DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR4 __ __ __ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L ⏐ ⏐ ⏐ ⏐ L Screening = None TX = TX Level TXV = TXV Level S = S Level 2/ ULTRA FAST RECTIFIER Features: L Package ___ = Axial SMS = Surface Mount Square Tab Voltage G = 400 V J = 600 V K = 800 V M = 1000 V N = 1200 V • Ultra Fast Recovery: 50-80 nsec Max. @ 25°C 85-125 nsec Max. @ 100°C • Single Chip Construction • PIV to 1200 Volts • Low Reverse Leakage Current • Hermetically Sealed • For High Efficiency Applications • Available in Axial Leaded & Surface Mount versions • Metallurgically Bonded • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR4G SDR4J SDR4K SDR4M SDR4N Symbol VRRM VRWM VR Io Value 400 600 800 1000 1200 3 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 3/8 " Junction to End Tab Amps IFSM 75 Amps Top & Tstg RθJL RθJE -65 to +175 20 14 ºC ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Axial Leaded SMS (Square) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0015B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR4G - SDR4N and SDR4GSMS – SDR4NSMS Part Type Symbol SDR2G – J SDR2K – N SDR2G – J SDR2K – N Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = 25ºC, 300 µs pulse) Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = -55ºC, 300 µs pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC) Max 1.9 2.1 2.1 2.3 5 0.5 40 50 60 70 80 Units Vdc Vdc μA μA pF VF VF IR IR CJ SDR2G – J SRS1K SRS1M SRS1N trr nsec Case Outline: (Axial) DIMENSIONS D B D ØC ØA DIM A B C D MIN .120” .130” .047” 1.00” MAX .180” .230” .053” --- Case Outline: Surface Mount (SMS) B A DIMENSIONS DIM MIN 0.172” A 0.180” B 0.022” C 0.002” D A C D MAX 0.180” 0.280” 0.028” –– Dimensions prior to solder dipping NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0015B DOC