Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SDR4G - SDR4N and SDR4GSMS – SDR4NSMS
3 AMP 400 – 1200 Volts 50-80 nsec
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/ SDR4 __ __ __
⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐
L
⏐ ⏐ ⏐ ⏐
L Screening
= None TX = TX Level TXV = TXV Level S = S Level
2/
ULTRA FAST RECTIFIER
Features:
L Package
___ = Axial SMS = Surface Mount Square Tab
Voltage
G = 400 V J = 600 V K = 800 V M = 1000 V N = 1200 V
• Ultra Fast Recovery: 50-80 nsec Max. @ 25°C 85-125 nsec Max. @ 100°C • Single Chip Construction • PIV to 1200 Volts • Low Reverse Leakage Current • Hermetically Sealed • For High Efficiency Applications • Available in Axial Leaded & Surface Mount versions • Metallurgically Bonded • TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Peak Repetitive Reverse and DC Blocking Voltage SDR4G SDR4J SDR4K SDR4M SDR4N
Symbol
VRRM VRWM VR Io
Value
400 600 800 1000 1200 3
Units
Volts
Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 3/8 " Junction to End Tab
Amps
IFSM
75
Amps
Top & Tstg RθJL RθJE
-65 to +175 20 14
ºC ºC/W
Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
Axial Leaded
SMS (Square)
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SDR4G - SDR4N and SDR4GSMS – SDR4NSMS
Part Type Symbol
SDR2G – J SDR2K – N SDR2G – J SDR2K – N
Electrical Characteristics
Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = 25ºC, 300 µs pulse) Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = -55ºC, 300 µs pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC)
Max
1.9 2.1 2.1 2.3 5 0.5 40 50 60 70 80
Units
Vdc Vdc μA μA pF
VF VF IR IR CJ
SDR2G – J SRS1K SRS1M SRS1N
trr
nsec
Case Outline: (Axial)
DIMENSIONS
D B D ØC ØA
DIM A B C D
MIN .120” .130” .047” 1.00”
MAX .180” .230” .053” ---
Case Outline: Surface Mount (SMS)
B A
DIMENSIONS DIM MIN 0.172” A 0.180” B 0.022” C 0.002” D
A
C
D
MAX 0.180” 0.280” 0.028” ––
Dimensions prior to solder dipping
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC
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