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SDR504_1

SDR504_1

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR504_1 - ULTRA FAST RECOVERY RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR504_1 数据手册
SDR504 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Thru SDR510 50 Amp 400-1000 Volt 80 nsec ULTRA FAST RECOVERY RECTIFIER Features:         Ultra fast recovery: 80 nsec maximum Low reverse leakage current Low thermal resistance High surge capability Hermetically sealed For high efficiency applications PIV to 1000V TX, TXV, and S-Level Screening Available 2/ Part Number/Ordering Information 1/ SDR5 __ __ __ │ │ └ Screening 2/ __ = Not Screened ││ TX = TX Level ││ TXV = TXV Level ││ S = S Level ││ │ └ Pin Configuration (See Table 1) │ __ = Normal (Cathode to Stud) R = Reverse (Anode to Stud) │ │ │ Family/Voltage └ 04 = 400V 06 = 600V 08 = 800V 10 = 1000V Designer’s Data Sheet Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case SDR504 SDR506 SDR508 SDR510 Symbol VRRM VRWM VR IO IFSM TOP & TSTG RJC Value 400 600 800 1000 50 625 -65 to +175 1.0 Units Volts Amps Amps ºC ºC/W Notes: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. DO-5: NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0049B DOC SDR504 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Thru SDR510 Symbol VF VF IR IR tRR CJ Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 50 Adc, TA = 25 ºC, 300s pulse) Instantaneous Forward Voltage Drop (IF = 50 Adc, TA = -55 ºC, 300s pulse) Reverse Leakage Current (Rated VR, TA = 25 ºC, 300s pulse minimum) Reverse Leakage Current (Rated VR, TA = 100 ºC, 300s pulse minimum) Reverse Recovery Time (IF = 500 mA, IR = 1 Amp, IRR = 250 mA, TA = 25 ºC) Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) Table 1- PIN ASSIGNMENT Code __ R Configuration Normal Reverse Terminal Anode Cathode Max 1.7 1.85 25 8 80 700 Units VDC VDC A mA nsec pF Stud Cathode Anode DO-5 Outline (Normal Pin Configuration Shown): NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0049B DOC
SDR504_1
1. 物料型号: - 型号为SDR504至SDR510,分别对应400V、600V、800V和1000V的电压等级。

2. 器件简介: - 该器件为80纳秒超快速回复整流二极管,具有超快速回复、低反向漏电流、低热阻、高浪涌能力等特点,适用于高效率应用场合,并提供高达1000V的反向阻断电压。

3. 引脚分配: - 引脚配置分为正常(阴极至焊盘)和反向(阳极至焊盘)两种配置,具体如下: - 正常配置:阳极、阴极 - 反向配置:阴极、阳极

4. 参数特性: - 包括峰值重复反向和直流阻断电压、平均整流前向电流、峰值浪涌电流、工作和存储温度、最大总热阻等参数。

5. 功能详解应用信息: - 该器件适用于高效率应用,具有80纳秒的最大超快速回复时间、低反向漏电流、高浪涌能力,并且是密封封装的。可用于400V至1000V的电压等级。

6. 封装信息: - 封装为DO-5型,提供了正常引脚配置的图示。
SDR504_1 价格&库存

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