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SDR521CT

SDR521CT

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR521CT - 12A 28nsec 100 to 200 V Hyper Fast Center tap Rectifier - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR521CT 数据手册
Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR520CT Series 12A 28nsec 100 to 200 V Hyper Fast Center tap Rectifier Features: • • • • • • • • Hyper Fast Recovery: 28nsec Maximum High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Eutectic Die Attach TX, TXV, and S Level Screening Available Higher Voltages Available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR52 __ __ __ __ │ │ │ └ Screening 2/ __ = Not Screened │││ TX = TX Level TXV = TXV │││ S = S Level │││ │││ │ │ └ Package 3/ J = TO-257 ││ S.5 = SMD.5 ││ G = Cerpack │ └ Configuration CT =Center tap │ │ └ Voltage 0 = 100 V 1 = 150 V 2 = 200 V Maximum Ratings Peak Repetitive Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TC = 100 °C, TO-257 = 90 ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case TO-257 (J) TO-257 SMD.5 & Cerpack CERPACK (G) Symbol SDR520CT SDR521CT SDR522CT Total Per Leg Per Leg VRRM Value 100 150 200 12 6 90 -65 to +200 2.4 1.9 Units Volts Io IFSM TOP & TSTG RθJC SMD.5 (S.5) Amps Amps ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0088B DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR520CT Series Electrical Characteristic 4/ Instantaneous Forward Voltage Drop (TA = 25ºC, 300 – 500 µsec Pulse) Instantaneous Forward Voltage Drop (IF = 6A, 300 – 500 µsec Pulse) Reverse Leakage Current (100% of rated VR, 300 µs pulse min.) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC) Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. IF = 6 A TA = -55 ºC TA = 25 ºC TA = 100 ºC Symbol VF1 VF2 IR1 IR2 tRR CJ Min –– –– Max 1.02 1.10 2 20 28 80 Units VDC VDC µA nsec pF –– –– –– –– 4/ All Electrical Characteristics Per Leg @25 ºC, Unless Otherwise Specified. Available Part Numbers: SDR520CTS.5; SDR520CTG; SDR520CTJ; SDR521CTS.5; SDR521CTG; SDR521CTJ; SDR522CTS.5; SDR522CTG; SDR522CTJ PIN ASSIGNMENT PACKAGE SMD.5 (S.5) CERPACK (G) TO-257 (J) Pin 1 Cathode (Base) Anode 1 Anode 1 Pin 2 Anode 1 Anode 2 Cathode Pin 3 Anode 2 Cathode (Base) Anode 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0088B DOC
SDR521CT
物料型号: - SDR520CT系列包括SDR520CT、SDR521CT、SDR522CT,分别对应100V、150V和200V的峰值重复反向电压。

器件简介: - 该系列是12A、28纳秒超快速中心抽头整流器,工作电压范围为100至200V。特点包括超快恢复时间、高浪涌额定值、低反向漏电流、低结电容和密封封装。

引脚分配: - SMD.5 (S.5)封装:Pin 1为阴极(基极),Pin 2为阳极1,Pin 3为阳极2。 - CERPACK (G)封装:Pin 1为阳极1,Pin 2为阴极(基极),Pin 3为阳极2。 - TO-257(J)封装:Pin 1为阳极1,Pin 2为阴极,Pin 3为阳极2。

参数特性: - 峰值重复反向电压(VRRM):100V、150V、200V。 - 平均整流前向电流(Io):12A和6A每腿。 - 峰值浪涌电流(IFSM):90A每腿。 - 工作和储存温度范围:-65至+200°C。 - 最大总热阻(ReJc):TO-257为2.4°C/W,SMD.5和Cerpack为1.9°C/W。

功能详解: - 该系列整流器具有超快速恢复时间(28纳秒)、低反向恢复时间和低结电容,适用于需要高速开关的应用。

应用信息: - 适用于需要高浪涌额定值和快速恢复时间的应用,如电源、电机驱动等。

封装信息: - 提供TO-257、SMD.5和Cerpack三种封装选项,每种封装都有其特定的引脚配置。
SDR521CT 价格&库存

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