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SDR55U110

SDR55U110

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR55U110 - ULTRA FAST CENTERTAP RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR55U110 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR55U080CT thru SDR55U120CT Series 55 AMP ULTRA FAST CENTERTAP RECTIFIER 800 - 1200 Volts 50 nsec Features:            Ultra Fast Recovery: 35 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available Available in Centertap and Doubler versions TX, TXV, Space Level Screening Available Consult Factory. DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR55U ___ ___ ___ ___ │ │ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ │ │ └ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package Type M = TO-254 N = TO-258 P = TO-259 Configuration CT = Common Cathode CA = Common Anode D = Doubler DR = Doubler Reverse Voltage/Family 080 = 800V 090 = 900V 100 = 1000V 110 = 1100V 120 = 1200V Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR55U080 SDR55U090 SDR55U100 SDR55U110 SDR55U120 Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 55 Units Volts Average Rectified Forward Current Peak Surge Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/4/ Amps (8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM Top & Tstg RθJE 250 -65 to +200 1.25 1.0 Amps ºC ºC/W Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case3/ TO-254 (M) 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Both legs tied together. 4/ Package limited. TO-258 (N) TO-259 (P) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR55U080CT thru SDR55U120CT Series Symbol IF = 10Adc IF = 20Adc IF = 50Adc IF = 10Adc IF = 20Adc IF = 50Adc IF = 10Adc IF = 20Adc IF = 50Adc VF1 VF2 VF3 IR1 IR2 IR3 IR4 CJ Electrical Characteristics (per leg) Instantaneous Forward Voltage Drop (TA = 25ºC, 300 sec pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 sec pulse) Instantaneous Forward Voltage Drop (TA = 125ºC, 300 sec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 sec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 sec pulse minimum) Reverse Leakage Current (Rated VR, TA = 125ºC, 300 sec pulse minimum) Reverse Leakage Current (Rated VR, TA = 150ºC, 300 sec pulse minimum) Junction Capacitance (VR = 5 Vdc, TA = 25ºC, f = 1MHz) (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 10 A, dIF / dt = 100A/s) (IF = 10 A, dIF / dt = 100A/s) (IF = 10 A, dIF / dt = 100A/s) (IF = 10 A, dIF / dt = 100A/s) Typ 1.75 1.85 2.1 1.75 1.85 2.05 1.3 1.52 1.88 20 1.5 5 15 50 45 35 100 50 3.7 110 6 Max 1.9 2.1 2.5 1.95 2.1 2.5 1.6 1.8 2.35 100 –– 20 –– –– 75 50 ------ Units Volts Volts Volts A mA mA mA pF TA = 25ºC TA = 100ºC TA = 25ºC TA = 25ºC TA = 100ºC TA = 100ºC trr1 trr2 trr3 IRM3 trr4 IRM4 nsec NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR55U080CT thru SDR55U120CT Series Case Outline: TO-258 Case Outline: TO-254 Case Outline: TO-259 PIN ASSIGNMENT Code CT CA D DR Function Common Cathode Common Anode Doubler Doubler Reverse Pin 1 Anode Cathode Cathode Anode Pin 2 Cathode Anode Anode / Cathode Cathode / Anode Pin 3 Anode Cathode Anode Cathode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119D DOC
SDR55U110
物料型号: - SDR55U080CT 至 SDR55U120CT Series

器件简介: - 该系列为55安培超快速中心抽头整流器,由Solid State Devices, Inc.制造,型号包括从800至1200伏特的多个版本。

引脚分配: - CT(Common Cathode):共阴极配置,引脚1为阳极,引脚2为阴极,引脚3为阳极。 - CA(Common Anode):共阳极配置,引脚1为阴极,引脚2为阳极,引脚3为阴极。 - D(Doubler):倍压配置,引脚1为阴极,引脚2为阳极/阴极,引脚3为阳极。 - DR(Doubler Reverse):反相倍压配置,引脚1为阳极,引脚2为阴极/阳极,引脚3为阴极。

参数特性: - 超快速恢复时间:典型值35纳秒。 - 高浪涌等级。 - 低反向漏电流。 - 低正向电压降。 - 低结电容。 - 可提供双倍电压和中心抽头版本。 - 根据MIL-PRF-19500进行筛选,提供不同等级的筛选服务。

功能详解: - 这些器件为超快速整流器,适用于高功率应用,具有低正向压降和快速恢复时间,以提高效率和可靠性。

应用信息: - 适用于需要高电流和高电压整流的应用,如电源、电机控制和再生能源系统。

封装信息: - 提供TO-254(M)、TO-258(N)、TO-259(P)等封装类型。 - 可根据需要提供金钎料芯片连接和超声铝线键合。 - 可提供陶瓷密封以提高密封性。
SDR55U110 价格&库存

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