0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SDR55U120

SDR55U120

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR55U120 - ULTRA FAST CENTERTAP RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR55U120 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR55U080CT thru SDR55U120CT Series 55 AMP ULTRA FAST CENTERTAP RECTIFIER 800 - 1200 Volts 50 nsec Features:            Ultra Fast Recovery: 35 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available Available in Centertap and Doubler versions TX, TXV, Space Level Screening Available Consult Factory. DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR55U ___ ___ ___ ___ │ │ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ │ │ └ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package Type M = TO-254 N = TO-258 P = TO-259 Configuration CT = Common Cathode CA = Common Anode D = Doubler DR = Doubler Reverse Voltage/Family 080 = 800V 090 = 900V 100 = 1000V 110 = 1100V 120 = 1200V Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR55U080 SDR55U090 SDR55U100 SDR55U110 SDR55U120 Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 55 Units Volts Average Rectified Forward Current Peak Surge Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/4/ Amps (8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM Top & Tstg RθJE 250 -65 to +200 1.25 1.0 Amps ºC ºC/W Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case3/ TO-254 (M) 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Both legs tied together. 4/ Package limited. TO-258 (N) TO-259 (P) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR55U080CT thru SDR55U120CT Series Symbol IF = 10Adc IF = 20Adc IF = 50Adc IF = 10Adc IF = 20Adc IF = 50Adc IF = 10Adc IF = 20Adc IF = 50Adc VF1 VF2 VF3 IR1 IR2 IR3 IR4 CJ Electrical Characteristics (per leg) Instantaneous Forward Voltage Drop (TA = 25ºC, 300 sec pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 sec pulse) Instantaneous Forward Voltage Drop (TA = 125ºC, 300 sec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 sec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 sec pulse minimum) Reverse Leakage Current (Rated VR, TA = 125ºC, 300 sec pulse minimum) Reverse Leakage Current (Rated VR, TA = 150ºC, 300 sec pulse minimum) Junction Capacitance (VR = 5 Vdc, TA = 25ºC, f = 1MHz) (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 10 A, dIF / dt = 100A/s) (IF = 10 A, dIF / dt = 100A/s) (IF = 10 A, dIF / dt = 100A/s) (IF = 10 A, dIF / dt = 100A/s) Typ 1.75 1.85 2.1 1.75 1.85 2.05 1.3 1.52 1.88 20 1.5 5 15 50 45 35 100 50 3.7 110 6 Max 1.9 2.1 2.5 1.95 2.1 2.5 1.6 1.8 2.35 100 –– 20 –– –– 75 50 ------ Units Volts Volts Volts A mA mA mA pF TA = 25ºC TA = 100ºC TA = 25ºC TA = 25ºC TA = 100ºC TA = 100ºC trr1 trr2 trr3 IRM3 trr4 IRM4 nsec NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR55U080CT thru SDR55U120CT Series Case Outline: TO-258 Case Outline: TO-254 Case Outline: TO-259 PIN ASSIGNMENT Code CT CA D DR Function Common Cathode Common Anode Doubler Doubler Reverse Pin 1 Anode Cathode Cathode Anode Pin 2 Cathode Anode Anode / Cathode Cathode / Anode Pin 3 Anode Cathode Anode Cathode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119D DOC
SDR55U120
1. 物料型号: - 型号系列:SDR55U080CT至SDR55U120CT - 制造商:Solid State Devices, Inc.

2. 器件简介: - 描述:55安培超快中心抽头整流器 - 特点:超快恢复时间(典型35纳秒)、高浪涌等级、低反向漏电流、低正向电压降、低结电容 - 封装类型:TO-254(M)、TO-258(N)、TO-259(P)

3. 引脚分配: - CT(共阴):1脚为阳极,2脚为阴极,3脚为阳极 - CA(共阳):1脚为阴极,2脚为阳极,3脚为阴极 - D(倍压):1脚为阴极,2脚为阳极/阴极,3脚为阳极 - DR(倍压反向):1脚为阳极,2脚为阴极/阳极,3脚为阴极

4. 参数特性: - 最大重复反向和DC阻断电压:800V至1200V - 平均整流前向电流(电阻负载,0Hz正弦波,TA=25°C):55A - 峰值浪涌电流(8.3ms脉冲,半正弦波,允许结在脉冲间达到平衡,TA=25°C):250A - 工作和存储温度:-65至+200°C - 最大热阻(结到外壳,每个单独二极管结到外壳):1.25°C/W至1.0°C/W

5. 功能详解应用信息: - 器件适用于需要高浪涌等级和低正向电压降的应用,如电源整流等。 - 提供中心抽头和倍压版本,可根据需要选择不同电压等级和封装类型。

6. 封装信息: - 提供TO-254、TO-258和TO-259三种封装类型,具体尺寸和外形可参考文档中的图示。
SDR55U120 价格&库存

很抱歉,暂时无法提供与“SDR55U120”相匹配的价格&库存,您可以联系我们找货

免费人工找货