SDR60U080N

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR60U080N thru SDR60U120N and SDR60U080P thru SDR60U120P DESIGNER’S DATA SHEET Part Number / Ordering Information SDR60 1/ __ │ │ │ │ │ │ │ │ │ │ │ │ │ └ __ │ │ │ │ │ │ │ │ └ __ │ │ │ │ └ __ └ Screening 2/ __ = N ot Screened TX = TX Level TXV = TXV Level S = S Level 60 AMP Low VF Ultra Fast Recovery Rectifier 800 -1200 Volts 50 nsec Package Type N = TO-258 P = TO-259 Features: • • • • • • • • • • Ultra Fast Recovery: 45 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available TX, TXV, Space Level Screening Available Consult 2/ Factory. Voltage/Family 080 = 800V 090 = 900V 100 = 1000V 110 = 1100V 120 = 1200V Recovery Time U = U ltra Fast Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR60U080 SDR60U090 SDR60U100 SDR60U110 SDR60U120 3/4/ Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 60 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) 3/4/ IFSM Top & Tstg RθJE TO-258 (N) 500 -65 to +200 0.75 Amps ºC ºC/W TO-259 (P) Operating & Storage Temperature Maximum Thermal Resistance Junction to End Tab3/ 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Pins 2 & 3 connected. 4/ Limited by wirebonding NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0144A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR60U080N thru SDR60U120N and SDR60U080P thru SDR60U120P Symbol IF = 20Adc IF = 50Adc IF = 100Adc IF = 20Adc IF = 50Adc IF = 100Adc IF = 20Adc IF = 50Adc IF = 100Adc VF1 VF2 VF3 IR1 Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300 μsec pulse) Typ 1.7 1.85 1.98 1.75 1.85 1.98 1.14 1.45 1.7 75 5 20 50 200 175 45 150 75 5 150 10 Max 1.9 2.0 2.5 -2.1 -1.4 1.7 -500 -150 --300 50 ------ Units Volts Volts Volts μA Instantaneous Forward Voltage Drop (TA = -55ºC, 300 μsec pulse) Instantaneous Forward Voltage Drop (TA = 125ºC, 300 μsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 μsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 μsec pulse minimum) (Rated VR, TA = 125ºC, 300 μsec pulse minimum) (Rated VR, TA = 150ºC, 300 μsec pulse minimum) IR2 mA Junction Capacitance (VR = 5 Vdc, TA = 25ºC, f = 1MHz) (VR = 10 Vdc, TA = 25ºC, f = 1MHz) CJ TA = 25ºC TA = 100ºC TA = 25ºC TA = 25ºC TA = 100ºC TA = 100ºC trr1 trr2 trr3 IRM3 trr4 IRM4 pF nsec nsec nsec A nsec A Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) Case Outline: TO-258 Case Outline: TO-259 Note 1: Pin 2&3 connected together NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0144A DOC