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SDR63CTJ

SDR63CTJ

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR63CTJ - 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR63CTJ 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR623CTJ Thru SDR626DRJ 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier Features: • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3 / High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Isolated Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Availabl e in Common Anode, Common Cathode, Doubler, and Doubler Reverse Configurations Custom Lead Forming Available TX, TXV, and S-Level Screening Available 2 / Designer’s Data Sheet Part Number/Ordering Information 1 / SDR62 __ __ __ __ __ ¦ ¦ ¦¦ ¦ + Screening 2/ __ = Not Screened ¦ ¦¦ TX = TX Level ¦¦ ¦¦ TXV = TXV Level ¦¦ ¦ S = S Level ¦¦¦ ¦ ¦ + Leg Bend Option ¦¦ ¦ (See Figure 1) ¦¦ + ¦¦ Package J = TO-257(J) ¦¦ Configuration CT = Common Cathode, ¦ ¦ + CA = Common Anode, D = Doubler, ¦ DR = Doubler Reverse + Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V Maximum Ratings SDR623__J SDR624__J SDR625__J SDR626__J Symbol VRRM VRWM VR Io IFSM TOP & TSTG Rθ JC Value 300 400 500 600 40 200 -65 to +175 1.0 2.1 Units Peak Repetitive Reverse Voltage Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/ Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case 4 / Junction to Case 5 / 5/ Amps Amps ºC ºC/W Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp. 4/ Both Legs Tied Together. 5/ Per Leg. TO-257(J) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0051D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR623CTJ Thru SDR626DRJ Symbol TA = 2 5 ºC TA = 2 5 ºC TA = 1 00 ºC TA = - 55 ºC TA = 25 ºC TA = 1 00 ºC VF1 VF2 VF3 VF4 IR1 IR2 tRR CJ Electrical Characteristics, per leg Instantaneous Forward Voltage Drop (IF = 10Adc, Pulse) (IF = 20Adc, Pulse) Instantaneous Forward Voltage Drop (IF = 10Adc, Pulse) Reverse Leakage Current (100% of rated VR, Pulse) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 2 5ºC) Junction Capacitance ( VR = 10VDC, T A = 25ºC, f = 1MHz) Max 1.4 1.7 1.3 1.5 50 5 35 150 Units VDC VDC µA mΑ nsec pF Figure 1- Optional Lead Bends Code CT CA D DR Suffix JDB TO-257(J) Outline: Suffix JUB PIN ASSIGNMENT FUNCTION Common Cathode Common Anode Doubler Doubler Reverse Pin 1 Anode1 Cathode1 Cathode Anode Pin 2 Cathode A node Common Common Pin 3 Anode2 Cathode2 A node Cathode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0051D DOC
SDR63CTJ
1. 物料型号: - 型号包括SDR623、SDR624、SDR625、SDR626,分别对应不同的电压等级:300V、400V、500V、600V。

2. 器件简介: - 这些器件是40A 35nsec的超快速中心抽头整流器,具有高浪涌等级、低反向漏电流、低结电容、隔离密封封装、金丝超声键合等特点,并提供共阴、共阳、倍压和倍压反向配置。

3. 引脚分配: - CT(共阴):Pin1为Anode1,Pin2为Cathode,Pin3为Anode2。 - CA(共阳):Pin1为Cathode1,Pin2为Anode,Pin3为Cathode2。 - D(倍压):Pin1为Cathode,Pin2为Common,Pin3为Anode。 - DR(倍压反向):Pin1为Anode,Pin2为Common,Pin3为Cathode。

4. 参数特性: - 峰值重复反向电压:300V、400V、500V、600V。 - 平均整流前向电流:40A。 - 峰值浪涌电流:200A。 - 工作和存储温度:-65至+175摄氏度。 - 最大热阻:结到外壳1.0°C/W,结到环境2.1°C/W。

5. 功能详解应用信息: - 这些器件具有超快速恢复时间(35nsec)、低反向恢复时间和低结电容,适用于需要高效率和高功率的应用场合。

6. 封装信息: - 封装类型为TO-257(J),这是一种常见的功率封装,适用于高功率整流器。
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