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SDR643CTS1

SDR643CTS1

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR643CTS1 - Ultra Fast Centertap Rectifier - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR643CTS1 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR643CTS1 thru SDR647CTS1 50 AMP 300-700 Volts 35 nsec Ultra Fast Centertap Rectifier Features: • • • • • • • • Ultra Fast Recovery: 25 nsec typical High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Power Surface Mount Package Ceramic Seals Available Higher Currents & Voltages Available – Contact Factory TX, TXV, and S-Level Screening Available2/ DESIGNER’S DATA SHEET SDR64 ___ CT ___ ___ │ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ └ Package │ S1= SMD1 └ Voltage/Family 3 = 300 V 4 = 400 V 5 = 500 V 6 = 600 V 7 = 700 V Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR643CTS1 SDR644CTS1 SDR645CTS1 SDR646CTS1 SDR647CTS1 Symbol VRRM VRWM VR Io Value 300 400 500 600 700 50 Units Volts Average Rectified Forward Current note 3 (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current note 3 (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, note 3 Amps IFSM Top & Tstg RθJC 500 -65 to +200 2.00 1.20 SMD1 Amps ºC ºC/W 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500; contact factory for screening flow. 3/ Both legs tied together *Also available in other packages: TO-254, TO-254Z, TO-257, and 28 Pin CLCC – Consult Factory NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0087D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR643CTS1 thru SDR647CTS1 Electrical Characteristics (Per Leg) Characteristics Instantaneous Forward Voltage Drop (IF = 5Adc, TA = 25ºC, 300 msec pulse) (IF = 10Adc, TA = 25ºC, 300 msec pulse) (IF = 15Adc, TA = 25ºC, 300 msec pulse) (IF = 20Adc, TA = 25ºC, 300 msec pulse) (IF = 30Adc, TA = 25ºC, 300 msec pulse) Instantaneous Forward Voltage Drop (IF = 15Adc, TA = 100ºC, 300 msec pulse) (IF = 30Adc, TA = 100ºC, 300 msec pulse) (IF = 15Adc, TA = -55ºC, 300 msec pulse) (IF = 30Adc, TA = -55ºC, 300 msec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 msec pulse min) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 msec pulse min) (Rated VR, TA = 125ºC, 300 msec pulse min) (Rated VR, TA = 150ºC, 300 msec pulse min) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 0.5 A, IR = 1A, IRR = 0.25A, TA = 25ºC) (IF = 0.5 A, IR = 1A, IRR = 0.25 A, TA = 100ºC) (IF = 10 A, dIF/dt = 100A/us, TA = 25ºC) (IF = 10 A, dIF/dt = 100A/us, TA = 100ºC) Symbol VF1 VF2 VF3 VF4 VF5 VF7 Typical 0.94 1.0 1.05 1.07 1.1 0.93 1.00 1.15 1.20 30 10 2 8 25 60 25 70 35 2.7 1.83 80 3.6 1.0 Maximum 1.35 1.5 1.25 1.5 150 50 10 120 35 - Unit Volts VF6 VF8 VF9 SDR647CTS1 ALL OTHER Volts IR1 IR2 IR3 IR4 CJ trr1 trr2 trr3 IRM3 ta/tb trr4 IRM4 ta/tb μA mA pF nsec nsec nsec A nsec A - Case Outline: SMD1 PIN OUT: PIN 1: ANODE 1 PIN 2: CATHODE PIN 3: ANODE 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0087D DOC
SDR643CTS1
物料型号: - SDR643CTS1至SDR647CTS1

器件简介: - 这些器件是快速恢复整流器,具有超快恢复时间(典型值为25纳秒),高浪涌等级,低反向漏电流,低结电容,并且采用密封功率表面贴装封装。还提供陶瓷密封可供选择,并且可提供更高电流和电压的版本,需要联系工厂。

引脚分配: - PIN 1: ANODE 1(阳极1) - PIN 2: CATHODE(阴极) - PIN 3: ANODE 2(阳极2)

参数特性: - 最大直流阻断电压:300V至700V不等 - 平均整流前向电流(在60Hz正弦波阻性负载下,环境温度25°C):50A - 峰值浪涌电流(8.3ms脉冲,半正弦波叠加在平均值上,允许结在脉冲间达到平衡,环境温度25°C):500A - 工作和储存温度范围:-65°C至+200°C - 最大热阻(结到外壳,每个单独二极管结到外壳):2.00°C/W和1.20°C/W

功能详解: - 这些器件具有超快恢复时间,高浪涌等级,低反向漏电流和低结电容,适用于需要快速整流的应用场景。

应用信息: - 适用于需要高电流和高电压整流的应用,具体应用需根据具体型号和参数进行选择。

封装信息: - 提供SMD1封装,并且还有TO-254, TO-254Z, TO-257和28 Pin CLCC封装可供选择,具体需咨询工厂。
SDR643CTS1 价格&库存

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