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SDR643CTS1TX

SDR643CTS1TX

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR643CTS1TX - 50 AMP 300-700 Volts 35 nsec Centertap Rectifier - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR643CTS1TX 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR643CTS1 thru SDR647CTS1 50 AMP 300-700 Volts 35 nsec Ultra Fast Centertap Rectifier Features: • • • • • • • • Ultra Fast Recovery: 25 nsec typical High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Power Surface Mount Package Ceramic Seals Available Higher Currents & Voltages Available – Contact Factory TX, TXV, and S-Level Screening Available2/ DESIGNER’S DATA SHEET SDR64 ___ CT ___ ___ │ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ └ Package │ S1= SMD1 └ Voltage/Family 3 = 300 V 4 = 400 V 5 = 500 V 6 = 600 V 7 = 700 V M aximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR643CTS1 SDR644CTS1 SDR645CTS1 SDR646CTS1 SDR647CTS1 Symbol VRRM VRWM VR Io Value 300 400 500 600 700 50 Units Volts Average Rectified Forward Current note 3 (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current note 3 (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, note 3 Amps IFSM Top & Tstg Rθ JC 500 -65 to +200 2.00 1.20 SMD1 Amps ºC ºC/W 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500; contact factory for screening flow. 3/ Both legs tied together *Also available in other packages: TO-254, TO-254Z, TO-257, and 28 Pin CLCC – Consult Factory NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0087C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR643CTS1 thru SDR647CTS1 Electrical Characteristics (Per Leg) Characteristics Instantaneous Forward Voltage Drop ( IF = 5Adc, TA = 25ºC, 300 msec pulse) (IF = 10Adc, TA = 25ºC, 300 msec pulse) (IF = 15Adc, TA = 25ºC, 300 msec pulse) (IF = 20Adc, TA = 25ºC, 300 msec pulse) (IF = 30Adc, TA = 25ºC, 300 msec pulse) Instantaneous Forward Voltage Drop ( IF = 15Adc, TA = 100ºC, 300 msec pulse) (IF = 30Adc, TA = 100ºC, 300 msec pulse) (IF = 15Adc, TA = -55ºC, 300 msec pulse) (IF = 30Adc, TA = -55ºC, 300 msec pulse) Reverse Leakage Current (Rated VR , TA = 25ºC, 300 msec pulse min) Reverse Leakage Current (Rated VR , TA = 100ºC, 300 msec pulse min) (Rated VR , TA = 125ºC, 300 msec pulse min) (Rated VR , TA = 150ºC, 300 msec pulse min) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time ( IF = 0.5 A, IR = 1A, IRR = 0.25A, TA = 25ºC) ( IF = 0.5 A, IR = 1A, IRR = 0.25 A, TA = 100ºC) ( IF = 10 A, dIF/dt = 100A/us, TA = 25ºC) ( IF = 10 A, dIF/dt = 100A/us, TA = 100ºC) Symbol VF1 VF2 VF3 VF4 VF5 VF7 VF9 Typical 0.94 1.0 1.05 1.07 1.1 0.93 1.00 1.15 1.20 30 10 2 8 25 60 25 70 35 2.7 1.83 80 3.6 1.0 Maximum 1.35 1.5 1.25 1.5 150 50 10 120 35 - Unit Volts VF6 VF8 SDR647CTS1 ALL OTHER Volts IR1 IR2 IR3 IR4 CJ trr1 trr2 trr3 IRM3 ta/t b trr4 IRM4 ta/t b μA mA pF nsec nsec nsec A nsec A - Case Outline: SMD1 PIN OUT: PIN 1: ANODE 1 PIN 2: CATHODE PIN 3: ANODE 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0087C DOC
SDR643CTS1TX
1. 物料型号: - 型号包括SDR643CTS1至SDR647CTS1,这些是50安培、300至700伏特的超快速中心抽头整流器。

2. 器件简介: - 这些器件是超快速中心抽头整流器,具有25纳秒的典型超快恢复时间、高浪涌等级、低反向漏电流和低结电容。它们采用密封的表面贴装封装,并且有陶瓷密封可供选择。还提供更高电流和电压的版本,具体可联系工厂。

3. 引脚分配: - PIN 1: ANODE 1(阳极1) - PIN 2: CATHODE(阴极) - PIN 3: ANODE 2(阳极2)

4. 参数特性: - 最大直流阻断电压:300伏特至700伏特不等。 - 平均整流前向电流(60赫兹正弦波负载,环境温度25°C):50安培。 - 峰值浪涌电流(8.3毫秒脉冲,半正弦波叠加在50安培上,环境温度25°C):500安培。 - 工作和存储温度:-65至+200°C。 - 最大热阻(结到外壳):2.00°C/W至1.20°C/W不等。

5. 功能详解应用信息: - 这些器件适用于需要高浪涌等级和低反向恢复时间的应用,如电源整流等。

6. 封装信息: - 提供SMD封装,尺寸为1.40英寸×0.50英寸×0.40英寸,最小尺寸为1.415英寸。 - 还提供其他封装,如TO-254、TO-254Z、TO-257和28引脚CLCC,具体可咨询工厂。
SDR643CTS1TX 价格&库存

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