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SDR647

SDR647

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR647 - ULTRAFAST CENTERTAP RECTIFIER - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SDR647 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR646CTM, Z, & J thru SDR647CTM, Z, & J 40 Amp ULTRAFAST CENTERTAP RECTIFIER 600-700 Volts 60 nsec Features: • • • • • • • Ultrafast Recovery: 60nsec Maximum High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Also Available in the following configurations: Common Anode: SDR646CAM, CAZ, & CAJ SDR647CAM, CAZ, & CAJ TX, TXV and Space Level Screening Available2/ DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR64 __ CT __ __ │ │ │ └ Screening2/ __ = Not Screened │││ TX = TX Level TXV = TXV │││ S = S Level │││ │││ │ │ └ Package M = TO-254 ││ Z = TO-254Z ││ J = TO-257 │ └ Centertap – Common Cathode │ │ └ Voltage 6 = 600 V 7 = 700 V Maximum Ratings Peak Repetitive Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TC = 25°C)3/ Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C)3/ Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case3/ Junction to Case4/ TO-254Z (Z) Symbol SDR646 SDR647 VRRM VRWM VR Io IFSM TOP & TSTG RθJC TO-257 (J) Value 600 700 40 400 -65 to +200 2.0 3.5 Units Volts Amps Amps ºC ºC/W TO-254 (M) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0089F DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR646CTM, Z, & J thru SDR647CTM, Z, & J Symbol IF = 10A IF = 2 0 A TA = -55 ºC TA = 100 ºC TA = 25 ºC TA = 100 ºC VF1 VF2 Electrical Characteristic Instantaneous Forward Voltage Drop (TA = 25ºC, 300 μsec Pulse) Instantaneous Forward Voltage Drop (IF = 10A, 300 μsec Pulse) Reverse Leakage Current (80% of rated VR, 300 μs pulse min.) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC) Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Both Legs Tied Together. 4/ Per Leg. Min –– –– Max 1.28 1.50 1.35 1.17 50 5.0 60 70 Units VDC VDC μA mA nsec pF VF3 VF4 IR1 IR2 tRR CJ –– –– –– –– NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0089F DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR646CTM, Z, & J thru SDR647CTM, Z, & J PIN ASSIGNMENT PACKAGE TO-254 (M) TO-254Z (Z) TO-257 (J) Pin 1 Anode 1 Anode 1 Anode 1 Pin 2 Cathode Cathode Cathode Pin 3 Anode 2 Anode 2 Anode 2 Available Part Numbers: SDR646CTM, SDR646CTZ, SDR646CTJ SDR647CTM, SDR647CTZ, SDR647CTJ TO-254: TO-254Z: PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 TO-257: NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0089F DOC
SDR647 价格&库存

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