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SDR656CTM

SDR656CTM

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR656CTM - 40AMPS 600 VOLTS 30 nsec HYPER FAST CENTERTAP RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR656CTM 数据手册
PRELIMINARY SDR656CTM & Z 40AMPS 600 VOLTS 30 nsec HYPER FAST CENTERTAP RECTIFIER TO-254 TO-254Z SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 Designer's Data Sheet FEATURES: • Hyper Fast Recovery: 30nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach Available • Ultrasonic Aluminum Wire Bonds • Common Anode and Doubler Versions Available • TX, TXV and Space Level Screening Available 1.30 Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SYMBOL VRRM VRWM VR Io VALUE UNITS SDR656CTM & Z 600 Volts Average Rectified Forward Current. (Resistive load, 60Hz, Sine Wave, TA = 25oC) 1/ Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25oC) 2/ Operating and Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, 1/ 1/ Both legs tied together 2/ Per leg 40 Amps IFSM 200 Amps TOP & TSTG -65 TO +175 o C Rθ JC 2.0 1.0 o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0028A SDR656CTM & Z PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 Electrical Characteristics (per leg) Instantaneous Forward Voltage Drop (IF = 10A TA = 25oC, 300µsec pulse ) (IF = 20A TA = 25oC, 300µsec pulse ) Instantaneous Forward Voltage Drop (IF = 10A TA = 100oC, 300µsec pulse ) (IF = 10A TA = -55oC, 300µsec pulse ) Reverse Leakage Current (Rated VR, TA = 25oC, 300µs pulse minimum ) Reverse Leakage Current (Rated VR, TA = 100oC, 300µs pulse minimum ) Junction Capacitance (VR = 10VDC, TA = 25oC, f = 1MHz) Reverse Recovery Time (TA= 25oC, IF = 0.5A, IR = 1.0A, IRR = 0.25A) SYMBOL VF VALUE 1.35 1.55 1.25 1.45 50 5 50 30 UNITS VDC VDC VDC VDC µΑ mA pf nsec VF IR IR CJ T RR CASE OUTLINE: TO-254 PIN 1: ANODE 1 PIN 2: CATHODE PIN 3: ANODE 2 CASE OUTLINE: TO-254Z PIN 1: ANODE 1 PIN 2: CATHODE PIN 3: ANODE 2 TYPICAL OPERATING CURVES TA= 25oC Unless otherwise specified PERCENT OF MAXIMUM FORWARD CURRENT RATING (%) FORWARD CURRENT (Amps) 10 110 oC 100 80 60 40 20 0 0 50 100 150 200 1 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 CASE TEMPERATURE (oC) FORWARD VOLTAGE (Volts)
SDR656CTM
1. 物料型号: - 型号为SDR656CTM和SDR656CTM&Z。

2. 器件简介: - 该器件是一个超快速中心抽头整流器,具有30纳秒的最大恢复时间,高浪涌额定值,低反向漏电流,低结电容,并且有密封封装和金钎料芯片连接等特性。

3. 引脚分配: - TO-254封装:PIN 1为阳极1,PIN 2为阴极,PIN 3为阳极2。 - TO-254Z封装:PIN 1为阳极1,PIN 2为阴极,PIN 3为阳极2。

4. 参数特性: - 最大重复反向和直流阻断电压为600伏特。 - 平均整流前向电流为40安培(60Hz正弦波,TA=25°C)。 - 峰值浪涌电流为200安培(8.3ms脉冲,半正弦波,TA=25°C)。 - 工作和存储温度范围为-65°C至+175°C。 - 最大热阻(结到外壳)分别为2.0°C/W和1.0°C/W。

5. 功能详解应用信息: - 该器件适用于需要超快速恢复时间和高浪涌能力的整流应用,如电源整流、电机控制等。

6. 封装信息: - 提供TO-254和TO-254Z两种封装形式。
SDR656CTM 价格&库存

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