0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SDR65CTM

SDR65CTM

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR65CTM - 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR65CTM 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR623CTM & Z Thru SDR626DRM & Z 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier Features: • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3 / High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Available in Common Anode, Common Cathode, Doubler, and Doubler Reverse Configurations Ceramic Seal for Improved Hermeticity Available TX, TXV, and S-Level Screening Available 2 / Designer’s Data Sheet Part Number/Ordering Information 1 / SDR62 __ __ __ __ __ ¦ ¦ ¦¦ ¦ + Screening 2/ __ = Not Screened ¦ ¦¦ TX = TX Level ¦¦ ¦¦ TXV = TXV Level ¦¦ ¦ S = S Level ¦¦¦ ¦ ¦ + Leg Bend Option ¦¦ ¦ (See Figure 1) ¦¦ + ¦¦ Package M = TO-254, Z = TO-254Z ¦¦ Configuration CT = Common Cathode, ¦ ¦ + CA = Common Anode, D = Doubler, ¦ DR = Doubler Reverse + Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V Maximum Ratings SDR623__M & Z SDR624__M & Z SDR625__M & Z SDR626__M & Z Symbol VRRM VRWM VR Io IFSM TOP & TSTG Rθ JC Value 300 400 500 600 40 200 -65 to +200 1.0 2.0 Units Peak Repetitive Reverse Voltage Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/ Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case 4 / Junction to Case 5 / 5/ Amps Amps ºC ºC/W Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp. 4/ Both Legs Tied Together. 5/ Per Leg. - TO-254 (M) - TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0049C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR623CTM & Z Thru SDR626DRM & Z Symbol TA = 2 5 ºC TA = 2 5 ºC TA = 1 00 ºC TA = - 55 ºC TA = 25 ºC TA = 1 00 ºC VF1 VF2 VF3 VF4 IR1 IR2 tRR CJ Electrical Characteristics, per leg Instantaneous Forward Voltage Drop (IF = 10Adc, Pulse) (IF = 20Adc, Pulse) Instantaneous Forward Voltage Drop (IF = 10Adc, Pulse) Reverse Leakage Current (80% of rated VR, Pulse) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 2 5ºC) Junction Capacitance ( VR = 10VDC, T A = 25ºC, f = 1MHz) Max 1.35 1.55 1.25 1.45 50 5 35 150 Units VDC VDC µA mΑ nsec pF Figure 1- Optional Lead Bends Code CT CA D DR Suffix MDB & ZDB TO-254 (Suffix M) Outline: Suffix MU & ZU PIN ASSIGNMENT FUNCTION Common Cathode Common Anode Doubler Doubler Reverse Pin 1 Anode Cathode Cathode Anode Pin 2 Cathode Anode Common Common Pin 3 Anode Cathode A node Cathode TO-254Z (Suffix Z) Outline: Measured in Inches NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0049C DOC
SDR65CTM
1. 物料型号: - SDR623CTM、SDR624CTM、SDR625CTM、SDR626CTM(共阴极配置) - SDR623CAM、SDR624CAM、SDR625CAM、SDR626CAM(共阳极配置) - SDR623DM、SDR624DM、SDR625DM、SDR626DM(加倍器配置) - SDR623DRM、SDR624DRM、SDR625DRM、SDR626DRM(加倍器反向配置)

2. 器件简介: - 这些是40A 35nsec 300-600V超快速中心抽头整流器,具有超快恢复时间、高浪涌等级、低反向漏电流和低结电容特性。它们采用陶瓷密封以提高密封性,并可提供不同引脚配置。

3. 引脚分配: - CT(共阴极):Pin1为阳极,Pin2为阴极,Pin3为阳极。 - CA(共阳极):Pin1为阴极,Pin2为阳极,Pin3为阴极。 - D(加倍器):Pin1为阴极,Pin2为公共,Pin3为阳极。 - DR(加倍器反向):Pin1为阳极,Pin2为公共,Pin3为阴极。

4. 参数特性: - 瞬态正向电压降:在25°C时,10A直流脉冲下为1.35V,20A直流脉冲下为1.55V。 - 反向漏电流:在25°C时,80%额定反向电压下为50uA,在100°C时为5mA。 - 反向恢复时间:在25°C时,0.5A正向电流,1A反向电流,0.25A反向恢复电流下为35nsec。 - 结电容:在25°C,10V直流电压,1MHz频率下为150pF。

5. 功能详解: - 这些整流器具有超快速恢复时间,最大为35nsec,适用于需要快速切换的应用。 - 它们还具有高浪涌等级和低反向漏电流,适合高效率的电源整流。 - 低结电容有助于减少开关损耗,提高电路性能。

6. 应用信息: - 这些整流器适用于需要高效率和快速响应的电源整流应用,如开关电源、电源适配器和电源管理电路。

7. 封装信息: - 封装类型为TO-254(M)和TO-254Z(Z),具体尺寸和引脚排列见PDF文档中的图表。
SDR65CTM 价格&库存

很抱歉,暂时无法提供与“SDR65CTM”相匹配的价格&库存,您可以联系我们找货

免费人工找货