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SDR65CTM

SDR65CTM

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR65CTM - 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SDR65CTM 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR623CTM & Z Thru SDR626DRM & Z 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier Features: • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3 / High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Available in Common Anode, Common Cathode, Doubler, and Doubler Reverse Configurations Ceramic Seal for Improved Hermeticity Available TX, TXV, and S-Level Screening Available 2 / Designer’s Data Sheet Part Number/Ordering Information 1 / SDR62 __ __ __ __ __ ¦ ¦ ¦¦ ¦ + Screening 2/ __ = Not Screened ¦ ¦¦ TX = TX Level ¦¦ ¦¦ TXV = TXV Level ¦¦ ¦ S = S Level ¦¦¦ ¦ ¦ + Leg Bend Option ¦¦ ¦ (See Figure 1) ¦¦ + ¦¦ Package M = TO-254, Z = TO-254Z ¦¦ Configuration CT = Common Cathode, ¦ ¦ + CA = Common Anode, D = Doubler, ¦ DR = Doubler Reverse + Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V Maximum Ratings SDR623__M & Z SDR624__M & Z SDR625__M & Z SDR626__M & Z Symbol VRRM VRWM VR Io IFSM TOP & TSTG Rθ JC Value 300 400 500 600 40 200 -65 to +200 1.0 2.0 Units Peak Repetitive Reverse Voltage Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/ Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case 4 / Junction to Case 5 / 5/ Amps Amps ºC ºC/W Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp. 4/ Both Legs Tied Together. 5/ Per Leg. - TO-254 (M) - TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0049C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR623CTM & Z Thru SDR626DRM & Z Symbol TA = 2 5 ºC TA = 2 5 ºC TA = 1 00 ºC TA = - 55 ºC TA = 25 ºC TA = 1 00 ºC VF1 VF2 VF3 VF4 IR1 IR2 tRR CJ Electrical Characteristics, per leg Instantaneous Forward Voltage Drop (IF = 10Adc, Pulse) (IF = 20Adc, Pulse) Instantaneous Forward Voltage Drop (IF = 10Adc, Pulse) Reverse Leakage Current (80% of rated VR, Pulse) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 2 5ºC) Junction Capacitance ( VR = 10VDC, T A = 25ºC, f = 1MHz) Max 1.35 1.55 1.25 1.45 50 5 35 150 Units VDC VDC µA mΑ nsec pF Figure 1- Optional Lead Bends Code CT CA D DR Suffix MDB & ZDB TO-254 (Suffix M) Outline: Suffix MU & ZU PIN ASSIGNMENT FUNCTION Common Cathode Common Anode Doubler Doubler Reverse Pin 1 Anode Cathode Cathode Anode Pin 2 Cathode Anode Common Common Pin 3 Anode Cathode A node Cathode TO-254Z (Suffix Z) Outline: Measured in Inches NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0049C DOC
SDR65CTM 价格&库存

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