SDR8200S6

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR8200S4 thru SDR8200S12 200 AMPS 400 ─ 1200 VOLTS 15 μsec STANDARD RECOVERY HIGH CURRENT RECTIFIER FEATURES: Forward Current to 200 Amps PIV to 1200 Volts Transient Voltage Rating of 200 Volts Above PIV Single Chip Construction Hermetically Sealed For High Power Applications For Reverse Polarity Version Add Suffix “R” Fast Recovery Version Available T X, TXV, and Space Level Screening Available Designer’s Data Sheet Part Number/Ordering Information SDR8200S __ __ __ │ │ └ Screening 1/ │ │ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ └ Package Type │ __ = DO-8 │ └ Voltage/Family 4 = 400V 6 = 600V 8 = 800V 10 = 1000V 12 = 1200V • • • • • • • • • MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage SDR8200S4 SDR8200S6 SDR8200S8 SDR8200S10 SDR8200S12 Symbol VRRM VRWM VR IO IFSM TOP & Tstg RθJC DO-8 Value 400 600 800 1000 1200 200 1400 -55 to +175 0.4 Unit Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25oC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA=25oC) Operating and Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: 1/ Modified MIL-PRF-19500 Screening Flow – Consult Factory. Amps Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RP0013B DOC Solid State Devices, Inc. SDR8200S4 thru SDR8200S12 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop ((IF = 200 Adc Pulse, TJ = 25oC) Instantaneous Forward Voltage Drop ( IF = 200 Adc Pulse, TJ = +175oC) Reverse Leakage Current (Rated VR pulse, TJ = 25oC) Reverse Leakage Current (Rated VR pulse, TJ = 175oC) Reverse Recovery Time ( IFM = 200 A, VR = 400 V, di/dt = -25 μs, RS = 10Ω, CS = 0.5 μF, TA = 25oC) CASE OUTLINE: DO-8 Symbol VF VF IR IR trr Value 1.45 1.40 1 40 15 Unit Vdc Vdc mA mA μsec *For information on curves, contact the Factory Representative for Engineering Assistance. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RP0013B DOC