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SDR951S1

SDR951S1

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR951S1 - 60 AMP 100-200 Volts 35nsec Hyper Fast Rectifier - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SDR951S1 数据手册
Solid State Devices, Inc. 14701Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR950S1 THRU SDR952S1 60 AMP 100-200 Volts 35nsec Hyper Fast Rectifier SMD1 DESIGNER’S DATA SHEET Features: • Hyper Fast Recovery: 35nsec typical • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Surface Mount Power Package • Gold Eutectic Die Attach Available • Ultrasonic Aluminum Wire Bonds • TX, TXV, and Space Level Screening Available. Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage 1/ SDR950S1 SDR951S1 SDR952S1 Symbol VRRM VRWM VR Io Value 100 150 200 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25ºC) 1/ Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, 1/ Connect pins 2&3 together 60 Amps IFSM Top & Tstg RθJL 600 Amps -65 to +200 0.8 ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0037C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR950S1 THRU SDR952S1 Electrical Characteristics Instantaneous Forward Voltage Drop (IF=25Adc, TA = 25ºC, 300 µsec pulse) (IF=50Adc, TA = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (IF= 50Adc, TA = 100ºC, 300 µsec pulse) (IF= 50Adc, TA = -55ºC, 300 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC ) CASE OUTLINE: SMD1 Pin 1: CATHODE Pin 2: ANODE Pin 3: ANODE Symbol VF1 Min –– Max 0.95 1.05 0.95 1.20 10 1 950 45 Units Volts VF2 IR1 IR2 CJ trr –– –– –– –– –– Volts µA mA pF nsec NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0037C DOC
SDR951S1
物料型号: - SDR950S1 - SDR951S1 - SDR952S1

器件简介: 这些是来自Solid State Devices, Inc.生产的超快速整流二极管,具有以下特点: - 典型35纳秒的超快速恢复时间 - 高浪涌等级 - 低反向漏电流 - 低结电容 - 密封表面贴装功率封装 - 金丝超声键合 - 可提供TX、TXV和太空级筛选

引脚分配: - Pin 1: 阴极(CATHODE) - Pin 2: 阳极(ANODE) - Pin 3: 阳极(ANODE)

参数特性: - 峰值重复反向和直流阻断电压:SDR950S1和SDR951S1为100V,SDR952S1为200V - 平均整流正向电流(60Hz正弦波,TA = 25°C):60安培 - 峰值浪涌电流(8.3ms脉冲,半正弦波,TA = 25°C):600安培 - 工作和存储温度:-65至+200°C - 最大热阻(结到外壳):0.8°C/W

功能详解: - 这些二极管具有超快速恢复时间,适用于需要快速切换的应用。 - 它们能够承受高浪涌电流,适合用于高功率电路。 - 反向漏电流低,减少了功耗。 - 结电容低,有助于提高高频电路的性能。

应用信息: 这些二极管适用于需要高功率和快速切换的应用,如电源整流、电机控制和太阳能逆变器等。

封装信息: 器件采用SMD1表面贴装封装,具体尺寸和形状需参考制造商提供的详细封装规格。
SDR951S1 价格&库存

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