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SDR956MZ

SDR956MZ

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR956MZ - 50A, 35nsec, 300-600 V Hyper Fast Rectifier - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SDR956MZ 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR953M & Z Thru SDR956M & Z Designer’s Data Sheet Part Number/Ordering Information 1 / SDR95 __ __ __ __ ¦ ¦ + Screening 2/ __ = Not Screened ¦ ¦ ¦ ¦ TX = TX Level ¦ ¦ ¦ TXV = TXV Level ¦ ¦ ¦ S = S Level ¦ ¦ ¦ ¦ + Leg Bend Option ¦ ¦ ¦ (See Figure 1) + ¦ Package M = TO-254, Z = TO-254Z ¦ ¦ + Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V. 50A, 35nsec, 300-600 V Hyper Fast Rectifier Features: • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3 / High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Low Profile Package Gold Eutectic Die Attach Available Ultrasonic Aluminum Wire Bonds Higher Voltages and Faster Recovery Times Available, Contact Factory Ceramic Seal for Improve d Hermeticity Available TX, TXV, and S-Level Screening Available 2 / Maximum Ratings SDR953M & Z SDR954M & Z SDR955M & Z SDR956M & Z Symbol VRRM VRWM VR Io 4/ Value 300 400 500 600 50 450 -65 to +200 0.7 Units Peak Repetitive Reverse Voltage And DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Peak Surge Current 5 / (8.3 ms Pulse, Half Sine Wave, or equivalent DC) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case Volts Amps Amps ºC ºC/W IFSM TOP & TSTG Rθ JC - Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF =.5 Amp, IR = 1A, IRR = .25A. 4/ Pins 2 and 3 Tied Together. 5/ Available with higher surge ratings. - TO-254 (M) - TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0029C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR953M & Z Thru SDR956M & Z Symbol 4/ Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 25A, Pulse) (IF = 50A, Pulse) Instantaneous Forward Voltage Drop (IF = 25Adc, Pulse) Reverse Leakage Current Reverse Recovery Time (IF =.5 Amp, IR = 1A, IRR = .25A) Junction Capacitance ( VR = 10VDC, T A = 25ºC, f = 1MHz) TA = 2 5 ºC TA = 2 5 ºC 4/ Max 1.30 1.65 1.4 1.2 100 10 35 250 Units VDC VDC µA mΑ nsec pF VF1 VF2 VF3 VF4 IR1 IR2 tRR CJ TA = - 55 ºC TA = 100 ºC TA = 25 ºC, Rated VR , P ulse TA = 100 ºC, Rated VR, P ulse TA = 25 ºC Figure 1- Optional Lead Bends PIN ASSIGNMENT (TO-254 and TO-254Z Packages) Code FUNCTION Pin 1 Cathode Pin 2 A node Pin 3 Anode Suffix MD & ZD Suffix MU & ZU Notes: 1/ For or dering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF =.5 Amp, IR = 1A, IRR = .25A. 4/ Pins 2 and 3 Tied Together. 5/ Available with higher surge ratings. TO-254Z (Suffix Z) Outline: TO-254 (Suffix M) Outline: NOTE: All specifications are subject to change without notification. SCD's for these devices sh ould be reviewed by SSDI prior to release. DATA SHEET #: RH0029C DOC
SDR956MZ 价格&库存

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