SDR969CTP

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR966CTN & SDR966CTP thru SDR969CTN & SDR969CTP 60 AMP 600 - 900 Volts 80 nsec Ultra Fast Recovery Centertap Rectifier TO-258 (N) TO-259 (P) DESIGNER’S DATA SHEET Features: • Soft Recovery Diode • Ultra Fast Recovery: 80 nsec Maximum • Faster Recovery Versions Available • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach Available • Ultrasonic Aluminum Wire Bond • Ceramic Seals for Improved Hermeticity Available • Common Anode and Doubler Versions Available • TX, TXV, Space Level Screening Available. Consult Factory. Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR966CTN & SDR966CTP SDR967CTN & SDR967CTP SDR968CTN & SDR968CTP SDR969CTN & SDR969CTP Symbol VRRM VRWM VR Io Value 600 700 800 900 60 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)1/ Peak Surge Current (Per Leg) (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, Each Individual Diode Junction to Case 1/ Notes: 1/ Both Legs Tied Together * Available with Higher Surge Rating Amps IFSM 500* Amps Top & Tstg -65 to +200 1.3 0.7 ºC RθJE ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0077B DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR966CTN & SDR966CTP thru SDR969CTN & SDR969CTP Symbol IF = 15A IF = 30A TA = 100ºC TA = -55ºC VF1 VF2 VF3 VF4 IR1 IR2 CJ TA = 25ºC Case Outline: TO-259 (P) Pin 1: Anode 1 Pin 2: Cathode Pin 3: Anode 2 PIN 3 Electrical Characteristics (Per Leg) Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µ s Pulse) Instantaneous Forward Voltage Drop (IF = 15A, 300 µ s Pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µ s Pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µ s Pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) Case Outline: TO-258 (N) Pin 1: Anode 1 Pin 2: Cathode Pin 3: Anode 2 2x .205 .195 .405 .395 PIN 2 Min –– –– –– –– –– –– –– –– –– .550 .530 .135 TYP .120 1.300 1.030 Max 1.20 1.35 1.10 1.30 100 10 100 80 Units Volts Volts µA mA pF nsec trr .750 .500 2x Ø.165 .155 .835 .815 .545 .535 .750 .500 2x .255 .245 PIN 3 1.215 .945 .700 1.175 .935 .680 .695 .685 2x .205 .195 .405 .395 PIN 2 PIN 1 .045 3x Ø .035 PIN 1 3x Ø.045 .035 SUFFIX: N .707 .697 .270 .240 .045 .035 2x .200 .170 SUFFIX: P .145 .135 .290 .280 2x .265 .245 2x Ø.150 .120 .270 .240 .190 MIN .145 .135 .045 .035 2x .200 .170 .190 MIN .190 MIN SUFFIX: NDB SUFFIX: NUB 2x .200 .170 SUFFIX: PDB .190 MIN SUFFIX: PUB 2x .200 .170 TYPICAL OPERATING CURVES TA = 25oC Unless Otherwise Specified