SDR9910CTP

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR998CTN&P thru SDR9912CTN&P 100 AMP 800 -1200 Volts 80 nsec ULTRA FAST COMMON CATHODE RECTIFIER TO-258 TO-259 DESIGNER’S DATA SHEET Features: • • • • • • • • • • Ultra Fast Recovery: 60 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available Available in Common Anode and Doubler versions: SDR998CAN&P-SDR9912CAN&P SDR998DN&P-SDR9912DN&P • TX, TXV, Space Level Screening Available Consult Factory. Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR998CTN&P SDR999CTN&P SDR9910CTN&P SDR9911CTN&P SDR9912CTN&P Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 60 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)note 1, 2 Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC)note 2 Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, note 1 Note 1: Both legs tied together Note 2: Package limited Amps IFSM 550 Amps Top & Tstg -65 to +200 0.9 0.5 ºC RθJE ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR998CTN&P thru SDR9912CTN&P Symbol IF = 25Adc IF = 50Adc IF = 25Adc IF = 25Adc VF1 VF2 IR1 IR2 CJ TA = 25ºC trr Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 µsec pulse) (TA = 100ºC, 300 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) Case Outline: TO-258 Pin1: Cathode Pin2: Anode Pin3: Anode Min –– –– –– –– –– –– Max 1.95 2.25 1.85 2.00 100 10 100 80 Units Volts Volts µA mA pF nsec Case Outline: TO-259 Pin1: Cathode Pin2: Anode Pin3: Anode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 PIN 3 DATA SHEET #: RU0119B DOC