0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SDR9912N

SDR9912N

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SDR9912N - 50 AMP 800 -1200 Volts 80 nsec Ultra Fast Recovery Rectifier - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SDR9912N 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR998N&P thru SDR9912N&P 50 AMP 800 -1200 Volts 80 nsec Ultra Fast Recovery Rectifier TO-258 TO-259 DESIGNER’S DATA SHEET Features: • • • • • • • • • • Ultra Fast Recovery: 60 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available TX, TXV, Space Level Screening Available Consult Factory. Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR998N&P SDR999N&P SDR9910N&P SDR9911N&P SDR9912N&P Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 50 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)note 1 Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC)note 2 Operating & Storage Temperature Maximum Thermal Resistance Junction to End Tab, note 1 Note 1: Pins 2&3 connected Note 2: High surge ratings available Amps IFSM 550 Amps Top & Tstg RθJE -65 to +200 0.5 ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0117B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR998N&P thru SDR9912N&P Symbol IF = 50Adc IF = 100Adc IF = 50Adc IF = 50Adc VF1 VF2 IR1 IR2 CJ TA = 25ºC trr Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 µsec pulse) (TA = 100ºC, 300 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) Case Outline: TO-258 Pin1: Cathode Pin2: Anode Pin3: Anode Min –– –– –– –– –– –– Max 1.75 2.3 1.7 1.85 100 10 150 80 Units Volts Volts µA mA pF nsec Case Outline: TO-259 Pin1: Cathode Pin2: Anode Pin3: Anode PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 PIN 3 Note 1: Pin 2&3 connected together NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0117B DOC
SDR9912N 价格&库存

很抱歉,暂时无法提供与“SDR9912N”相匹配的价格&库存,您可以联系我们找货

免费人工找货