SED10HB45

SED10HB45

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SED10HB45 - SCHOTTKY RECTIFIER - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SED10HB45 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd. * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SED10HB45, SED10HE45 and SED10HF45 10 AMP 45 VOLTS SCHOTTKY RECTIFIER FEATURES: Low Reverse Leakage Low Forward Voltage Drop Hermetically Sealed Power Surface Mount Package Guard Ring for Overvoltage Protection Eutectic Die Attach 175oC Operating Temperature TX, TXV, and Space Level Screening Available2/ Symbol VRRM VRWM VR IO IFSM TOP & Tstg SED10HB45 SED10HE45 SED10HF45 RθJC Designer’s Data Sheet Part Number / Ordering Information 1/ SED10__ 45 __ ⏐ ⏐ ⏐ ⏐ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level L Configuration • • • • • • • HB = without lead HE = with lead HF = with lead, reverse polarity MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 100oC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, 1 pulse, TA = 25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Value 45 10 250 -55 to +175 1.25 1.25 3.00 Units Volts Amps Amps o C o C/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. SEDPACK 1 HB Series HE / HF Series NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0002G DOC Solid State Devices, Inc. 14701 Firestone Blvd. * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SED10HB45, SED10HE45 and SED10HF45 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF =5 ADC, 300-500 μsec Pulse) Instantaneous Forward Voltage Drop (IF =10 ADC, 300-500 μsec Pulse) Instantaneous Forward Voltage Drop (IF =20 ADC, 300-500 μsec Pulse) Reverse Leakage Current (Rated VR, 300 μsec pulse minimum) Junction Capacitance o (T A = 25 C, f = 1 MHz) CASE OUTLINE: SED10HB45 TA = -55oC o TA = 25 C o TA = 125 C TA = -55oC o TA = 25 C o TA = 125 C TA = -55oC o TA = 25 C o TA = 125 C TA = 25oC o TA = 100 C o TA = 125 C VR = 5V VR = 10V CASE OUTLINE: SED10HE45 Symbol Maximum T ypical Unit VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 IR1 IR2 IR3 CJ1 CJ2 0.52 0.56 0.49 0.69 0.25 25 900 - 0.58 0.48 0.36 0.62 0.54 0.44 0.69 0.64 0.57 0.02 3 18 780 580 VDC VDC VDC mA pF CASE OUTLINE: SED10HF45 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0002G DOC
SED10HB45 价格&库存

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