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SED20HB100

SED20HB100

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SED20HB100 - SCHOTTKY RECTIFIER - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SED20HB100 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd. * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SED20HB100 SED20HE100 20 AMP 100 VOLTS SCHOTTKY RECTIFIER FEATURES: Low Reverse Leakage Low Forward Voltage Drop Hermetically Sealed Power Surface Mount Package Guard Ring for Overvoltage Protection Eutectic Die Attach 175oC Operating Temperature TX, TXV, and Space Level Screening Available2/ Symbol VRRM VRWM VR IO IFSM TOP & Tstg RθJC SEDPACK 1 Designer’s Data Sheet Part Number / Ordering Information 1/ SED20 __ 100 __ ⏐ ⏐ ⏐ ⏐ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level L Configuration • • • • • • • HB = without lead HE = with lead MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 100oC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction to Reach Equilibrium between Pulses, TA = 25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening to MIL-PRF-19500. Value 100 20 175 -55 to +175 1.25 Units Volts Amps Amps o o C C/W HB Series HE Series NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0024B DOC Solid State Devices, Inc. 14701 Firestone Blvd. * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SED20HB100 SED20HE100 Symbol IF =10 ADC IF =20 ADC IF =10 ADC IF =20 ADC TA = 25oC TA = 125oC Maximum Unit ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (TA = 25oC, 300-500 μsec Pulse) Instantaneous Forward Voltage Drop (TA = +125oC, 300-500 μsec Pulse) Reverse Leakage Current (Rated VR, 300 μsec pulse minimum) Junction Capacitance (VR = 10 VDC, TA = 25oC, f = 1 MHz) CASE OUTLINE: SED10HB45 VF1 VF2 VF1 VF2 IR1 IR2 CJ 0.78 0.87 0.63 0.70 1.5 10 600 VDC VDC mA pF CASE OUTLINE: SED10HE45 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0024B DOC
SED20HB100 价格&库存

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