SED20HE45

SED20HE45

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SED20HE45 - SCHOTTKY RECTIFIER - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SED20HE45 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd. * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SED20HB45, SED20HE45 and SED20HF45 20 AMP 45 VOLTS SCHOTTKY RECTIFIER FEATURES: Low Reverse Leakage Low Forward Voltage Drop Hermetically Sealed Power Surface Mount Package Guard Ring for Overvoltage Protection Eutectic Die Attach 175oC Operating Temperature TX, TXV, and Space Level Screening Available2/ Symbol VRRM VRWM VR IO IFSM TOP & Tstg SED20HB45 SED20HE45 SED20HF45 RθJC Designer’s Data Sheet Part Number / Ordering Information 1/ SED20__ 45 __ ⏐ ⏐ ⏐ ⏐ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level L Configuration • • • • • • • HB = without lead HE = with lead HF = with lead, reverse polarity MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 100oC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, 1 pulse, TA = 25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Value 45 20 250 -55 to +175 1.25 1.25 3.00 Units Volts Amps Amps o C o C/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. SEDPACK 1 HB Series HE / HF Series NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RSED49B DOC Solid State Devices, Inc. 14701 Firestone Blvd. * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SED20HB45, SED20HE45 and SED20HF45 Symbol TA = -55oC o TA = 25 C o TA = 125 C TA = -55oC o TA = 25 C o TA = 125 C TA = -55oC o TA = 25 C o TA = 125 C TA = 25oC o TA = 100 C o TA = 125 C VR = 5V VR = 10V Maximum T ypical Unit ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF =5 ADC, 300-500 μsec Pulse) Instantaneous Forward Voltage Drop (IF =10 ADC, 300-500 μsec Pulse) Instantaneous Forward Voltage Drop (IF =20 ADC, 300-500 μsec Pulse) Reverse Leakage Current (Rated VR, 300 μsec pulse minimum) Junction Capacitance o (T A = 25 C, f = 1 MHz) VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 IR1 IR2 IR3 CJ1 CJ2 0.52 0.56 0.49 0.69 0.25 25 900 - 0.58 0.48 0.36 0.62 0.54 0.44 0.69 0.64 0.57 0.02 3 18 780 580 VDC VDC VDC mA pF CASE OUTLINE: SED20HB45 CASE OUTLINE: SED20HE45 CASE OUTLINE: SED20HF45 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RSED49B DOC
SED20HE45
物料型号: - SED20HB45 - SED20HE45 - SED20HF45

器件简介: 这些是20安培45伏的肖特基整流器,由Solid State Devices, Inc.制造。它们具有低反向漏电流和低正向电压降的特点,并且有HB、HE、HF三种配置,分别对应无引线、有引线和有引线且具有反向极性保护。

引脚分配: - HB系列:无引线 - HE系列:有引线 - HF系列:有引线,具有反向极性保护

参数特性: - 最大重复反向电压和直流阻断电压:45伏 - 平均整流正向电流(电阻负载,60赫兹正弦波,环境温度100°C):20安培 - 峰值浪涌电流(8.3毫秒脉冲,半正弦波,单次脉冲,环境温度25°C):250安培 - 工作和存储温度:-55至+175摄氏度 - 最大热阻(结到外壳):SED20HB45为1.25°C/W,SED20HE45为1.25°C/W,SED20HF45为3.00°C/W

功能详解: 这些肖特基整流器具有低反向漏电流和低正向电压降,适用于需要高效率整流的应用。它们还具有过电压保护的防护环和用于高温操作的共晶芯片连接。

应用信息: 适用于需要高效率整流和过电压保护的应用,如电源、电机驱动和再生能源系统。

封装信息: - SED20HB45:无引线封装 - SED20HE45:有引线封装 - SED20HF45:有引线封装,具有反向极性保护
SED20HE45 价格&库存

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