SFF100N20-3TTX

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF100N20/3T 100 AMP , 200 Volts, 25 mΩ Avalanche Rated N-channel MOSFET Features:        Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Power Package with high pin current carrying capability Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF100N20 ___ ___ ___ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option __ = Straight Leads 4/ Package /3T= TO-3 (Pin Diameter : 0.058”-0.063”)  Maximum Ratings5/ Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC. continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC Value 200 ±20 ±30 55 100 40 60 1500 50 300 -55 to +175 0.5 (typ.0.3) TO-3 Units V V A A A mJ W ºC ºC/W @ TC = 25ºC @ TC = 25ºC @ TC = 125ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0044A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF100N20/3T Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 48A, Tj= 25 C VGS = 10V, ID = 48A, Tj=125oC VGS = 10V, ID = 48A, Tj= 175oC VDS = VGS, ID = 4.0mA, Tj= 25oC VDS = VGS, ID = 4.0mA, Tj= 125oC VDS = VGS, ID = 4.0mA, Tj= -55oC VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 200V, VGS = 0V, Tj = 25oC VDS = 200V, VGS = 0V, Tj = 125oC VDS = 200V, VGS = 0V, Tj = 150oC VDS = 10V, ID = 48A, Tj = 25oC VGS = 10V VDS = 100V ID = 48A VGS = 10V VDS = 100V ID = 48A RG = 4.0Ω, pw= 3us IF = 48A, VGS = 0V IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz o Electrical Characteristics5/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Min 200 –– –– –– 2.5 1.5 –– –– –– –– –– –– 25 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 220 25 50 65 4.5 3.6 5 10 30 0.01 2.5 25 50 150 45 75 50 50 110 50 0.90 190 11 1 310 17 2.5 5300 1050 175 Max –– 30 65 –– 5.0 –– 6 ±100 –– 25 150 –– –– 250 65 120 75 75 135 75 1.5 250 –– –– –– –– –– –– –– –– Units V mΩ BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Q gd td(on) tr td(off) tf VSD trr1 Irm1 Qrr1 trr2 Irm2 Qrr2 Ciss Coss Crss V nA μA μA μA Mho nC Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage nsec V nsec A μC nsec A μC pF Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Note 1: P/N: SFF80N20/3T: Pin Diameter: 0.063” 0.058” Note 2: This dimension shall be measured at points .050 - .055” below the seating plane. When gage is not used, measurement will be made at seating plane. This outline does not meet the minimum criteria established by JS-10 for registration. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0044A DOC